Dielectric behaviors and electrical properties of Gd-doped Aurivillius KBi₄Ti₄O₁₅ ceramics

Gd-doped Aurivillius KBi₄Ti₄O₁₅ ceramics were prepared via conventional solid-state method for the first time. Dielectric behaviors and electrical properties were probed via dielectric and impedance spectroscopies. A single relaxation behavior due to bulk contribution was observed in the Gd_0.5K_0.5Bi₄Ti₄O₁₅ ceramics. Phase transition was noted at ~ 560 °C. Kinetic analysis was carried out to probe conductivity and dielectric relaxation in the GKBT ceramics. The study elucidated the contributions of defect-conduction-relaxation behaviors. These types of Aurivillius compounds have fascinating industrial applications in piezoelectric devices at high temperatures and frequencies and in dielectric capacitors. It is essential to understand the electrical behaviors for modification process in future to enhance the performance properties of electronic ceramics.