Development of thermodynamic modeling of oxygen-doped GaN semiconductor

Jing Bo Li; Jean Claude Tedenac; Changrong Li; Weijing Zhang

doi:10.1016/S0364-5916(03)00025-7

Development of thermodynamic modeling of oxygen-doped GaN semiconductor

Jing Bo Li^*, Jean Claude Tedenac, Changrong Li, Weijing Zhang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The thermodynamic modeling of GaN was refined to describe the semiconducting properties of GaN semiconductors with the use of CEF (Compound Energy Formalism). Oxygen doped GaN was taken as an example. The formation energies of charged component compounds were defined as functions of the Fermi-level based on the results of the ab initio calculations and adjusted to fit experimental data. The yellow luminescence (YL) effect in unintentionally doped GaN was described.

Original language	English
Pages (from-to)	1-8
Number of pages	8
Journal	Calphad: Computer Coupling of Phase Diagrams and Thermochemistry
Volume	27
Issue number	1
DOIs	https://doi.org/10.1016/S0364-5916(03)00025-7
Publication status	Published - Mar 2003
Externally published	Yes

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10.1016/S0364-5916(03)00025-7

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title = "Development of thermodynamic modeling of oxygen-doped GaN semiconductor",

abstract = "The thermodynamic modeling of GaN was refined to describe the semiconducting properties of GaN semiconductors with the use of CEF (Compound Energy Formalism). Oxygen doped GaN was taken as an example. The formation energies of charged component compounds were defined as functions of the Fermi-level based on the results of the ab initio calculations and adjusted to fit experimental data. The yellow luminescence (YL) effect in unintentionally doped GaN was described.",

author = "Li, \{Jing Bo\} and Tedenac, \{Jean Claude\} and Changrong Li and Weijing Zhang",

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AU - Li, Jing Bo

AU - Tedenac, Jean Claude

AU - Li, Changrong

AU - Zhang, Weijing

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Y1 - 2003/3

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AB - The thermodynamic modeling of GaN was refined to describe the semiconducting properties of GaN semiconductors with the use of CEF (Compound Energy Formalism). Oxygen doped GaN was taken as an example. The formation energies of charged component compounds were defined as functions of the Fermi-level based on the results of the ab initio calculations and adjusted to fit experimental data. The yellow luminescence (YL) effect in unintentionally doped GaN was described.

UR - https://www.scopus.com/pages/publications/0038021360

U2 - 10.1016/S0364-5916(03)00025-7

DO - 10.1016/S0364-5916(03)00025-7

M3 - Article

AN - SCOPUS:0038021360

SN - 0364-5916

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JO - Calphad: Computer Coupling of Phase Diagrams and Thermochemistry

JF - Calphad: Computer Coupling of Phase Diagrams and Thermochemistry

IS - 1

ER -

Development of thermodynamic modeling of oxygen-doped GaN semiconductor

Abstract

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