Abstract
Resistance strain force sensors have been applied to monitor the strains in various parts and structures for industrial use. Here, we review the working principles, structural forms, and fabrication processes for resistance strain gauges. In particular, we focus on recent developments in resistance stress transfer for resistance strain force sensors and the creep effect due to sustained loads and/or temperature variations. Various error compensation methods to reduce the creep effect are analyzed to develop a metrology standard for resistance strain force sensors. Additionally, the current status of carbon nanotubes (CNTs), silicon carbide (SiC), gallium nitride (GaN), and other wide band gap semiconductors for a wide range of strain sensors are reviewed. The technical requirements and key issues of resistance strain force sensors for future applications are presented.
| Original language | English |
|---|---|
| Article number | 5826 |
| Pages (from-to) | 1-18 |
| Number of pages | 18 |
| Journal | Sensors |
| Volume | 20 |
| Issue number | 20 |
| DOIs | |
| Publication status | Published - 2 Oct 2020 |
Keywords
- Carbon nanotubes (CNTs)
- Creep effect
- Piezoresistive effect
- Resistance strain force sensor
- Resistance strain gauge
- Stress transfer