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Design of EUVL camera with large numerical aperture

  • Yanqiu Li*
  • , Takeo Watanabe
  • , Hiroo Kinoshita
  • *Corresponding author for this work
  • University of Hyogo

Research output: Contribution to journalConference articlepeer-review

Abstract

A design of four mirror imaging optics has been presented. The optics is designed for 50 nm at the wavelength of 13.5 nm. The exposure field is 25 mm×0.5 mm on wafer. The astigmatism and the distortion are corrected well in the ring field. The study shows a potential solution of four-mirror camera with numerical aperture (NA)≥0.15 for extreme ultraviolet lithography (EUVL). The ring is still not large enough to meet the requirements of EUVL.

Original languageEnglish
Pages (from-to)759-764
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3997
Publication statusPublished - 2000
Externally publishedYes
EventEmerging Lithographic Technologies IV - Santa Clara, CA, USA
Duration: 28 Feb 20001 Mar 2000

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