Design of a W-Band GaAs-Based SIW Chip Filter Using Higher Order Mode Resonances

Yu Xiao; Peizhe Shan; Yu Zhao; Houjun Sun; Fan Yang

doi:10.1109/LMWC.2018.2890265

Design of a W-Band GaAs-Based SIW Chip Filter Using Higher Order Mode Resonances

Yu Xiao
, Peizhe Shan
, Yu Zhao
, Houjun Sun^*
, Fan Yang

^*Corresponding author for this work

School of Integrated Circuits and Electronics

Research output: Contribution to journal › Article › peer-review

54 Citations (Scopus)

Abstract

In this letter, an on-chip bandpass filter is designed and implemented based on a 70-\mu \text{m} GaAs substrate integrated waveguide (SIW) technique for W-band integrated transceiver applications. To achieve a high-frequency selectivity, a modal bypass coupling realized by higher order mode resonators is introduced in the SIW filter, and two designable transmission zeros are generated accordingly. The presented filter has a center frequency of 92.7 GHz, with a 3-dB bandwidth of about 3.2 GHz. The measured out-of-band rejection is better than 30 dB at 90 and 95 GHz, respectively.

Original language	English
Article number	8612922
Pages (from-to)	104-106
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	29
Issue number	2
DOIs	https://doi.org/10.1109/LMWC.2018.2890265
Publication status	Published - Feb 2019

Keywords

GaAs filter
W-band.
on-chip filter
substrate integrated waveguide (SIW) bandpass filter (BPF)
transmission zero (TZ)

Access to Document

10.1109/LMWC.2018.2890265

Cite this

@article{61b453b5aed54d799520d3f9a5445bd2,

title = "Design of a W-Band GaAs-Based SIW Chip Filter Using Higher Order Mode Resonances",

abstract = "In this letter, an on-chip bandpass filter is designed and implemented based on a 70-\textbackslash{}mu \textbackslash{}text\{m\} GaAs substrate integrated waveguide (SIW) technique for W-band integrated transceiver applications. To achieve a high-frequency selectivity, a modal bypass coupling realized by higher order mode resonators is introduced in the SIW filter, and two designable transmission zeros are generated accordingly. The presented filter has a center frequency of 92.7 GHz, with a 3-dB bandwidth of about 3.2 GHz. The measured out-of-band rejection is better than 30 dB at 90 and 95 GHz, respectively.",

keywords = "GaAs filter, W-band., on-chip filter, substrate integrated waveguide (SIW) bandpass filter (BPF), transmission zero (TZ)",

author = "Yu Xiao and Peizhe Shan and Yu Zhao and Houjun Sun and Fan Yang",

note = "Publisher Copyright: {\textcopyright} 2001-2012 IEEE.",

year = "2019",

month = feb,

doi = "10.1109/LMWC.2018.2890265",

language = "English",

volume = "29",

pages = "104--106",

journal = "IEEE Microwave and Wireless Components Letters",

issn = "1531-1309",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Design of a W-Band GaAs-Based SIW Chip Filter Using Higher Order Mode Resonances

AU - Xiao, Yu

AU - Shan, Peizhe

AU - Zhao, Yu

AU - Sun, Houjun

AU - Yang, Fan

PY - 2019/2

Y1 - 2019/2

N2 - In this letter, an on-chip bandpass filter is designed and implemented based on a 70-\mu \text{m} GaAs substrate integrated waveguide (SIW) technique for W-band integrated transceiver applications. To achieve a high-frequency selectivity, a modal bypass coupling realized by higher order mode resonators is introduced in the SIW filter, and two designable transmission zeros are generated accordingly. The presented filter has a center frequency of 92.7 GHz, with a 3-dB bandwidth of about 3.2 GHz. The measured out-of-band rejection is better than 30 dB at 90 and 95 GHz, respectively.

AB - In this letter, an on-chip bandpass filter is designed and implemented based on a 70-\mu \text{m} GaAs substrate integrated waveguide (SIW) technique for W-band integrated transceiver applications. To achieve a high-frequency selectivity, a modal bypass coupling realized by higher order mode resonators is introduced in the SIW filter, and two designable transmission zeros are generated accordingly. The presented filter has a center frequency of 92.7 GHz, with a 3-dB bandwidth of about 3.2 GHz. The measured out-of-band rejection is better than 30 dB at 90 and 95 GHz, respectively.

KW - GaAs filter

KW - W-band.

KW - on-chip filter

KW - substrate integrated waveguide (SIW) bandpass filter (BPF)

KW - transmission zero (TZ)

UR - https://www.scopus.com/pages/publications/85061695667

U2 - 10.1109/LMWC.2018.2890265

DO - 10.1109/LMWC.2018.2890265

M3 - Article

AN - SCOPUS:85061695667

SN - 1531-1309

VL - 29

SP - 104

EP - 106

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 2

M1 - 8612922

ER -

Design of a W-Band GaAs-Based SIW Chip Filter Using Higher Order Mode Resonances

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this