Design of a millimeter-wave high power pulsed amplifier

Yu Xiao; Guoqiang Zhao; Houjun Sun

doi:10.13443/j.cjors.2014090901

Design of a millimeter-wave high power pulsed amplifier

Yu Xiao
, Guoqiang Zhao^*
, Houjun Sun

^*Corresponding author for this work

School of Integrated Circuits and Electronics

Beijing Institute of Technology

Research output: Contribution to journal › Article › peer-review

Abstract

A 33 dBm high power pulsed amplifier based on a monolithic microwave integrated circuit (MMIC) is designed and measured. The effect of direct current (DC) biased circuit on the pulse rising and falling time caused by the stabilizing capacitors and bond wire is discussed in detail. The measured rising and falling time is less than 60 ns, and the peak power descent is less than 10% which meets the technical requirements well.

Original language	English
Pages (from-to)	803-807
Number of pages	5
Journal	Dianbo Kexue Xuebao/Chinese Journal of Radio Science
Volume	30
Issue number	4
DOIs	https://doi.org/10.13443/j.cjors.2014090901
Publication status	Published - 1 Aug 2015

Keywords

Millimeter-wave high power amplifier
Parasitic parameters analysis
Pulse modulation

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Cite this

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title = "Design of a millimeter-wave high power pulsed amplifier",

abstract = "A 33 dBm high power pulsed amplifier based on a monolithic microwave integrated circuit (MMIC) is designed and measured. The effect of direct current (DC) biased circuit on the pulse rising and falling time caused by the stabilizing capacitors and bond wire is discussed in detail. The measured rising and falling time is less than 60 ns, and the peak power descent is less than 10\% which meets the technical requirements well.",

keywords = "Millimeter-wave high power amplifier, Parasitic parameters analysis, Pulse modulation",

author = "Yu Xiao and Guoqiang Zhao and Houjun Sun",

note = "Publisher Copyright: Copyright {\textcopyright} 2015 by Editorial Department of Chinese Journal of Radio Science",

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N2 - A 33 dBm high power pulsed amplifier based on a monolithic microwave integrated circuit (MMIC) is designed and measured. The effect of direct current (DC) biased circuit on the pulse rising and falling time caused by the stabilizing capacitors and bond wire is discussed in detail. The measured rising and falling time is less than 60 ns, and the peak power descent is less than 10% which meets the technical requirements well.

AB - A 33 dBm high power pulsed amplifier based on a monolithic microwave integrated circuit (MMIC) is designed and measured. The effect of direct current (DC) biased circuit on the pulse rising and falling time caused by the stabilizing capacitors and bond wire is discussed in detail. The measured rising and falling time is less than 60 ns, and the peak power descent is less than 10% which meets the technical requirements well.

KW - Millimeter-wave high power amplifier

KW - Parasitic parameters analysis

KW - Pulse modulation

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M3 - Article

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JF - Dianbo Kexue Xuebao/Chinese Journal of Radio Science

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Design of a millimeter-wave high power pulsed amplifier

Abstract

Keywords

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