Design of a 200GHz sub-harmonic mixer with planar Schottky diodes

Chengcheng Wan; Tong Fei; Ling Chen; Weihua Yu; Xin Lv

doi:10.1109/ICMTCE.2013.6812446

Design of a 200GHz sub-harmonic mixer with planar Schottky diodes

Chengcheng Wan
, Tong Fei
, Ling Chen
, Weihua Yu
, Xin Lv

School of Integrated Circuits and Electronics

Research output: Contribution to conference › Paper › peer-review

2 Citations (Scopus)

Abstract

This paper presents the design and simulation results of a novel 200GHz sub-harmonic mixer. The device is based on an anti-parallel pair of GaAsSchottky diodes. The circuits are integrated with the IF filter and fabricated on a suspended quartz-based substrate. A best double sideband mixer conversion loss of 10.5dB was achieved with 6mW of LO power. Over an RF band of 183-220GHz, the double sideband mixer conversion loss is below 15dB.

Original language	English
Pages	324-326
Number of pages	3
DOIs	https://doi.org/10.1109/ICMTCE.2013.6812446
Publication status	Published - 2013
Event	2013 3rd IEEE International Conference on Microwave Technology and Computational Electromagnetics, ICMTCE 2013 - Qingdao, China Duration: 27 Aug 2013 → 29 Aug 2013

Conference

Conference	2013 3rd IEEE International Conference on Microwave Technology and Computational Electromagnetics, ICMTCE 2013
Country/Territory	China
City	Qingdao
Period	27/08/13 → 29/08/13

Keywords

GaAsSchottky diodes
sub-harmonic mixer
suspended quartz microstrip circuits

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10.1109/ICMTCE.2013.6812446

Cite this

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abstract = "This paper presents the design and simulation results of a novel 200GHz sub-harmonic mixer. The device is based on an anti-parallel pair of GaAsSchottky diodes. The circuits are integrated with the IF filter and fabricated on a suspended quartz-based substrate. A best double sideband mixer conversion loss of 10.5dB was achieved with 6mW of LO power. Over an RF band of 183-220GHz, the double sideband mixer conversion loss is below 15dB.",

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AU - Wan, Chengcheng

AU - Fei, Tong

AU - Chen, Ling

AU - Yu, Weihua

AU - Lv, Xin

PY - 2013

Y1 - 2013

N2 - This paper presents the design and simulation results of a novel 200GHz sub-harmonic mixer. The device is based on an anti-parallel pair of GaAsSchottky diodes. The circuits are integrated with the IF filter and fabricated on a suspended quartz-based substrate. A best double sideband mixer conversion loss of 10.5dB was achieved with 6mW of LO power. Over an RF band of 183-220GHz, the double sideband mixer conversion loss is below 15dB.

AB - This paper presents the design and simulation results of a novel 200GHz sub-harmonic mixer. The device is based on an anti-parallel pair of GaAsSchottky diodes. The circuits are integrated with the IF filter and fabricated on a suspended quartz-based substrate. A best double sideband mixer conversion loss of 10.5dB was achieved with 6mW of LO power. Over an RF band of 183-220GHz, the double sideband mixer conversion loss is below 15dB.

KW - GaAsSchottky diodes

KW - sub-harmonic mixer

KW - suspended quartz microstrip circuits

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Y2 - 27 August 2013 through 29 August 2013

ER -

Design of a 200GHz sub-harmonic mixer with planar Schottky diodes

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Keywords

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