DC and RF accelerated life testing of GaN microwave power device

Yang Yang; Bo Xu; Dongming Jia; Hao Jiang; Shi Yao; Tangsheng Chen; Feng Qian

DC and RF accelerated life testing of GaN microwave power device

Yang Yang^*
, Bo Xu
, Dongming Jia
, Hao Jiang
, Shi Yao
, Tangsheng Chen
, Feng Qian

^*Corresponding author for this work

Nanjing Electronic Devices Institute
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

1.25 mm gate-width GaN HEMT and 12 mm gate-width GaN microwave power amplifier fabricated by Nanjing Electronic Devices Institute were chosen for the test. The DC working reliability of the 1.25 mm gate-width GaN HEMT was evaluated by using three-temperature accelerated life testing, and the results showed that the failure probability was 1. 86×10^-9/h at the channel temperature of 125℃; The RF working reliability of the 12 mm gate-width GaN HEMT was evaluated by using RF accelerated life testing, and the results showed that the failure probability was less than 1.02×10^-7/h at the channel temperature of 125℃.

Original language	English
Pages (from-to)	217-220 and 252
Journal	Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics
Volume	35
Issue number	3
Publication status	Published - 25 Jun 2015
Externally published	Yes

Keywords

Accelerated life test
GaN
High electron mobility transistor(HEMT)
Microwave power device

Cite this

@article{45eb59670b4b49fdbde331265232a6ea,

title = "DC and RF accelerated life testing of GaN microwave power device",

abstract = "1.25 mm gate-width GaN HEMT and 12 mm gate-width GaN microwave power amplifier fabricated by Nanjing Electronic Devices Institute were chosen for the test. The DC working reliability of the 1.25 mm gate-width GaN HEMT was evaluated by using three-temperature accelerated life testing, and the results showed that the failure probability was 1. 86×10-9/h at the channel temperature of 125℃; The RF working reliability of the 12 mm gate-width GaN HEMT was evaluated by using RF accelerated life testing, and the results showed that the failure probability was less than 1.02×10-7/h at the channel temperature of 125℃.",

keywords = "Accelerated life test, GaN, High electron mobility transistor(HEMT), Microwave power device",

author = "Yang Yang and Bo Xu and Dongming Jia and Hao Jiang and Shi Yao and Tangsheng Chen and Feng Qian",

year = "2015",

month = jun,

day = "25",

language = "English",

volume = "35",

pages = "217--220 and 252",

journal = "Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics",

issn = "1000-3819",

publisher = "Research Progress of Solid State Electronics",

number = "3",

}

TY - JOUR

T1 - DC and RF accelerated life testing of GaN microwave power device

AU - Yang, Yang

AU - Xu, Bo

AU - Jia, Dongming

AU - Jiang, Hao

AU - Yao, Shi

AU - Chen, Tangsheng

AU - Qian, Feng

PY - 2015/6/25

Y1 - 2015/6/25

N2 - 1.25 mm gate-width GaN HEMT and 12 mm gate-width GaN microwave power amplifier fabricated by Nanjing Electronic Devices Institute were chosen for the test. The DC working reliability of the 1.25 mm gate-width GaN HEMT was evaluated by using three-temperature accelerated life testing, and the results showed that the failure probability was 1. 86×10-9/h at the channel temperature of 125℃; The RF working reliability of the 12 mm gate-width GaN HEMT was evaluated by using RF accelerated life testing, and the results showed that the failure probability was less than 1.02×10-7/h at the channel temperature of 125℃.

AB - 1.25 mm gate-width GaN HEMT and 12 mm gate-width GaN microwave power amplifier fabricated by Nanjing Electronic Devices Institute were chosen for the test. The DC working reliability of the 1.25 mm gate-width GaN HEMT was evaluated by using three-temperature accelerated life testing, and the results showed that the failure probability was 1. 86×10-9/h at the channel temperature of 125℃; The RF working reliability of the 12 mm gate-width GaN HEMT was evaluated by using RF accelerated life testing, and the results showed that the failure probability was less than 1.02×10-7/h at the channel temperature of 125℃.

KW - Accelerated life test

KW - GaN

KW - High electron mobility transistor(HEMT)

KW - Microwave power device

UR - https://www.scopus.com/pages/publications/84937402422

M3 - Article

AN - SCOPUS:84937402422

SN - 1000-3819

VL - 35

SP - 217-220 and 252

JO - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

JF - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

IS - 3

ER -

DC and RF accelerated life testing of GaN microwave power device

Abstract

Keywords

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