Cs0.05(FA0.98MA0.02)0.95Pb(I0.98Br0.02)3-CMOS Image Sensor for Broadband (UV-Vis-NIR) Photodetection with 99.997% Pixel Functionality

Yunfei Xie; Peng Sun; Xuan Ye; Zijian Pan; Jiasheng Li; Hao Ning; Zhi Xiang Zhang; Zongwen Li; Qianqian Zhang; Yongliang Xie; Xiaochen Wang; Yan Jiang; Srikrishna Chanakya Bodepudi

doi:10.1109/NANO67986.2026.11667469

Cs_0.05(FA_0.98MA_0.02)_0.95Pb(I_0.98Br_0.02)3-CMOS Image Sensor for Broadband (UV-Vis-NIR) Photodetection with 99.997% Pixel Functionality

Yunfei Xie
, Peng Sun
, Xuan Ye
, Zijian Pan
, Jiasheng Li
, Hao Ning
, Zhi Xiang Zhang
, Zongwen Li
, Qianqian Zhang
, Yongliang Xie
, Xiaochen Wang^*
, Yan Jiang^*
, Srikrishna Chanakya Bodepudi^*

^*Corresponding author for this work

College of Integrated Circuits
Zhejiang University
Beijing Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The integration of large-scale perovskite films with CMOS technology is crucial to unlock the full potential of broadband image sensing. Despite significant advances, challenges remain in achieving high functional pixel density, uniform film quality, and seamless integration with standard semiconductor processes. In this work, we present a breakthrough approach for depositing exceptionally uniform s_0.05(FA_0.98 MA_0.02)0.95 Pb(I_0.98 Br_0.02)₃ perovskite films onto CMOS chips using vacuum quenching. The resulting 640 × 512 pixel sensor achieves 99.997% of functional pixel density, with broadband ultraviolet-visible-near infrared (UV-Vis-NIR, 300nm-1000nm) response, attributed to excellent uniformity of perovskite films. Additionally, an on-chip broadband image fusion algorithm optimally merges data from the three spectral bands, improving image quality and detail extraction. This monolithic perovskite-CMOS integration approach provides a cost-effective solution for high-performance broadband imaging.

Original language	English
Title of host publication	2026 IEEE 26th International Conference on Nanotechnology, NANO 2026
Publisher	IEEE Computer Society
Pages	363-368
Number of pages	6
ISBN (Electronic)	9798319519481
DOIs	https://doi.org/10.1109/NANO67986.2026.11667469
Publication status	Published - 2026
Externally published	Yes
Event	26th IEEE International Conference on Nanotechnology, NANO 2026 - Nanjing, China Duration: 5 Jul 2026 → 8 Jul 2026

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
ISSN (Print)	1944-9399
ISSN (Electronic)	1944-9380

Conference

Conference	26th IEEE International Conference on Nanotechnology, NANO 2026
Country/Territory	China
City	Nanjing
Period	5/07/26 → 8/07/26

Keywords

CMOS
Monolithic Integration
Multi-Spectral Imaging
Perovskite
Vacuum Quenching

Access to Document

10.1109/NANO67986.2026.11667469

Cite this

Xie, Y., Sun, P., Ye, X., Pan, Z., Li, J., Ning, H., Zhang, Z. X., Li, Z., Zhang, Q., Xie, Y., Wang, X., Jiang, Y., & Bodepudi, S. C. (2026). Cs_0.05(FA_0.98MA_0.02)_0.95Pb(I_0.98Br_0.02)3-CMOS Image Sensor for Broadband (UV-Vis-NIR) Photodetection with 99.997% Pixel Functionality. In 2026 IEEE 26th International Conference on Nanotechnology, NANO 2026 (pp. 363-368). (Proceedings of the IEEE Conference on Nanotechnology). IEEE Computer Society. https://doi.org/10.1109/NANO67986.2026.11667469

@inproceedings{12a3cdd207ef436081155d3dc98c5f8d,

title = "Cs0.05(FA0.98MA0.02)0.95Pb(I0.98Br0.02)3-CMOS Image Sensor for Broadband (UV-Vis-NIR) Photodetection with 99.997\% Pixel Functionality",

abstract = "The integration of large-scale perovskite films with CMOS technology is crucial to unlock the full potential of broadband image sensing. Despite significant advances, challenges remain in achieving high functional pixel density, uniform film quality, and seamless integration with standard semiconductor processes. In this work, we present a breakthrough approach for depositing exceptionally uniform s0.05(FA0.98 MA0.02)0.95 Pb(I0.98 Br0.02)3 perovskite films onto CMOS chips using vacuum quenching. The resulting 640 {\texttimes} 512 pixel sensor achieves 99.997\% of functional pixel density, with broadband ultraviolet-visible-near infrared (UV-Vis-NIR, 300nm-1000nm) response, attributed to excellent uniformity of perovskite films. Additionally, an on-chip broadband image fusion algorithm optimally merges data from the three spectral bands, improving image quality and detail extraction. This monolithic perovskite-CMOS integration approach provides a cost-effective solution for high-performance broadband imaging.",

keywords = "CMOS, Monolithic Integration, Multi-Spectral Imaging, Perovskite, Vacuum Quenching",

author = "Yunfei Xie and Peng Sun and Xuan Ye and Zijian Pan and Jiasheng Li and Hao Ning and Zhang, \{Zhi Xiang\} and Zongwen Li and Qianqian Zhang and Yongliang Xie and Xiaochen Wang and Yan Jiang and Bodepudi, \{Srikrishna Chanakya\}",

note = "Publisher Copyright: {\textcopyright} 2026 IEEE.; 26th IEEE International Conference on Nanotechnology, NANO 2026 ; Conference date: 05-07-2026 Through 08-07-2026",

year = "2026",

doi = "10.1109/NANO67986.2026.11667469",

language = "English",

series = "Proceedings of the IEEE Conference on Nanotechnology",

publisher = "IEEE Computer Society",

pages = "363--368",

booktitle = "2026 IEEE 26th International Conference on Nanotechnology, NANO 2026",

address = "United States",

}

Xie, Y, Sun, P, Ye, X, Pan, Z, Li, J, Ning, H, Zhang, ZX, Li, Z, Zhang, Q, Xie, Y, Wang, X, Jiang, Y & Bodepudi, SC 2026, Cs_0.05(FA_0.98MA_0.02)_0.95Pb(I_0.98Br_0.02)3-CMOS Image Sensor for Broadband (UV-Vis-NIR) Photodetection with 99.997% Pixel Functionality. in 2026 IEEE 26th International Conference on Nanotechnology, NANO 2026. Proceedings of the IEEE Conference on Nanotechnology, IEEE Computer Society, pp. 363-368, 26th IEEE International Conference on Nanotechnology, NANO 2026, Nanjing, China, 5/07/26. https://doi.org/10.1109/NANO67986.2026.11667469

Cs_0.05(FA_0.98MA_0.02)_0.95Pb(I_0.98Br_0.02)3-CMOS Image Sensor for Broadband (UV-Vis-NIR) Photodetection with 99.997% Pixel Functionality. / Xie, Yunfei; Sun, Peng; Ye, Xuan et al.
2026 IEEE 26th International Conference on Nanotechnology, NANO 2026. IEEE Computer Society, 2026. p. 363-368 (Proceedings of the IEEE Conference on Nanotechnology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

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AU - Xie, Yunfei

AU - Sun, Peng

AU - Ye, Xuan

AU - Pan, Zijian

AU - Li, Jiasheng

AU - Ning, Hao

AU - Zhang, Zhi Xiang

AU - Li, Zongwen

AU - Zhang, Qianqian

AU - Xie, Yongliang

AU - Wang, Xiaochen

AU - Jiang, Yan

AU - Bodepudi, Srikrishna Chanakya

PY - 2026

Y1 - 2026

N2 - The integration of large-scale perovskite films with CMOS technology is crucial to unlock the full potential of broadband image sensing. Despite significant advances, challenges remain in achieving high functional pixel density, uniform film quality, and seamless integration with standard semiconductor processes. In this work, we present a breakthrough approach for depositing exceptionally uniform s0.05(FA0.98 MA0.02)0.95 Pb(I0.98 Br0.02)3 perovskite films onto CMOS chips using vacuum quenching. The resulting 640 × 512 pixel sensor achieves 99.997% of functional pixel density, with broadband ultraviolet-visible-near infrared (UV-Vis-NIR, 300nm-1000nm) response, attributed to excellent uniformity of perovskite films. Additionally, an on-chip broadband image fusion algorithm optimally merges data from the three spectral bands, improving image quality and detail extraction. This monolithic perovskite-CMOS integration approach provides a cost-effective solution for high-performance broadband imaging.

AB - The integration of large-scale perovskite films with CMOS technology is crucial to unlock the full potential of broadband image sensing. Despite significant advances, challenges remain in achieving high functional pixel density, uniform film quality, and seamless integration with standard semiconductor processes. In this work, we present a breakthrough approach for depositing exceptionally uniform s0.05(FA0.98 MA0.02)0.95 Pb(I0.98 Br0.02)3 perovskite films onto CMOS chips using vacuum quenching. The resulting 640 × 512 pixel sensor achieves 99.997% of functional pixel density, with broadband ultraviolet-visible-near infrared (UV-Vis-NIR, 300nm-1000nm) response, attributed to excellent uniformity of perovskite films. Additionally, an on-chip broadband image fusion algorithm optimally merges data from the three spectral bands, improving image quality and detail extraction. This monolithic perovskite-CMOS integration approach provides a cost-effective solution for high-performance broadband imaging.

KW - CMOS

KW - Monolithic Integration

KW - Multi-Spectral Imaging

KW - Perovskite

KW - Vacuum Quenching

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U2 - 10.1109/NANO67986.2026.11667469

DO - 10.1109/NANO67986.2026.11667469

M3 - Conference contribution

AN - SCOPUS:105049816090

T3 - Proceedings of the IEEE Conference on Nanotechnology

SP - 363

EP - 368

BT - 2026 IEEE 26th International Conference on Nanotechnology, NANO 2026

PB - IEEE Computer Society

T2 - 26th IEEE International Conference on Nanotechnology, NANO 2026

Y2 - 5 July 2026 through 8 July 2026

ER -

Xie Y, Sun P, Ye X, Pan Z, Li J, Ning H et al. Cs_0.05(FA_0.98MA_0.02)_0.95Pb(I_0.98Br_0.02)3-CMOS Image Sensor for Broadband (UV-Vis-NIR) Photodetection with 99.997% Pixel Functionality. In 2026 IEEE 26th International Conference on Nanotechnology, NANO 2026. IEEE Computer Society. 2026. p. 363-368. (Proceedings of the IEEE Conference on Nanotechnology). doi: 10.1109/NANO67986.2026.11667469