Crystallization behavior and ferroelectric properties of PbTiO3/Ba0.85Sr0.15TiO3/PbTiO 3 sandwich thin film on Pt/Ti/SiO2/Si substrates

Shaobo Liu; Yanqiu Li; Meidong Liu

doi:10.1007/s11664-003-0092-4

Crystallization behavior and ferroelectric properties of PbTiO₃/Ba_0.85Sr_0.15TiO₃/PbTiO ₃ sandwich thin film on Pt/Ti/SiO₂/Si substrates

Shaobo Liu^*, Yanqiu Li, Meidong Liu

^*Corresponding author for this work

CAS - Institute of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A PbTiO₃/Ba_0.85Sr_0.15TiO₃/PbTiO ₃ (PT/BST15/PT) sandwich thin film has been prepared on Pt/Ti/SiO₂/Si substrates by an improved sol-gel technique. It is found that such films under rapid thermal annealing at 700°C crystalline more favorably with the addition of a PbTiO₃ layer. They possess a pure, perovskite-phase structure with a random orientation. The polarization-electric field (P-E) hysteresis loop and current-voltage (I-V) characteristics curves reveal that a PT/BST15/PT film exhibits good ferroelectricity at room temperature. However, no sharp peak, only a weak maximum, is observed in the curves of the dielectric constant versus temperature. The dielectric constant, loss tangent, leakage current density at 20 kV/cm, remnant polarization, and coercive field of the PT/BST15/PT film are 438, 0.025, 1.3 × 10^-6 Acm^-2, 2.46 μCcm^-2, and 41 kVcm^-1, respectively, at 25°C and 10 kHz. The PT/BST15/PT film is a candidate material for high sensitivity elements for uncooled, infrared, focal plane arrays (UFPAs) to be used at near ambient temperature.

Original language	English
Pages (from-to)	1085-1089
Number of pages	5
Journal	Journal of Electronic Materials
Volume	32
Issue number	10
DOIs	https://doi.org/10.1007/s11664-003-0092-4
Publication status	Published - Oct 2003
Externally published	Yes

Keywords

Dielectric properties
Ferroelectric properties
Sol-gel
X-ray diffraction

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10.1007/s11664-003-0092-4

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@article{077f091c499643f3b19da1ea09ed128c,

title = "Crystallization behavior and ferroelectric properties of PbTiO3/Ba0.85Sr0.15TiO3/PbTiO 3 sandwich thin film on Pt/Ti/SiO2/Si substrates",

abstract = "A PbTiO3/Ba0.85Sr0.15TiO3/PbTiO 3 (PT/BST15/PT) sandwich thin film has been prepared on Pt/Ti/SiO2/Si substrates by an improved sol-gel technique. It is found that such films under rapid thermal annealing at 700°C crystalline more favorably with the addition of a PbTiO3 layer. They possess a pure, perovskite-phase structure with a random orientation. The polarization-electric field (P-E) hysteresis loop and current-voltage (I-V) characteristics curves reveal that a PT/BST15/PT film exhibits good ferroelectricity at room temperature. However, no sharp peak, only a weak maximum, is observed in the curves of the dielectric constant versus temperature. The dielectric constant, loss tangent, leakage current density at 20 kV/cm, remnant polarization, and coercive field of the PT/BST15/PT film are 438, 0.025, 1.3 × 10-6 Acm-2, 2.46 μCcm-2, and 41 kVcm-1, respectively, at 25°C and 10 kHz. The PT/BST15/PT film is a candidate material for high sensitivity elements for uncooled, infrared, focal plane arrays (UFPAs) to be used at near ambient temperature.",

keywords = "Dielectric properties, Ferroelectric properties, Sol-gel, X-ray diffraction",

author = "Shaobo Liu and Yanqiu Li and Meidong Liu",

year = "2003",

month = oct,

doi = "10.1007/s11664-003-0092-4",

language = "English",

volume = "32",

pages = "1085--1089",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "10",

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TY - JOUR

T1 - Crystallization behavior and ferroelectric properties of PbTiO3/Ba0.85Sr0.15TiO3/PbTiO 3 sandwich thin film on Pt/Ti/SiO2/Si substrates

AU - Liu, Shaobo

AU - Li, Yanqiu

AU - Liu, Meidong

PY - 2003/10

Y1 - 2003/10

N2 - A PbTiO3/Ba0.85Sr0.15TiO3/PbTiO 3 (PT/BST15/PT) sandwich thin film has been prepared on Pt/Ti/SiO2/Si substrates by an improved sol-gel technique. It is found that such films under rapid thermal annealing at 700°C crystalline more favorably with the addition of a PbTiO3 layer. They possess a pure, perovskite-phase structure with a random orientation. The polarization-electric field (P-E) hysteresis loop and current-voltage (I-V) characteristics curves reveal that a PT/BST15/PT film exhibits good ferroelectricity at room temperature. However, no sharp peak, only a weak maximum, is observed in the curves of the dielectric constant versus temperature. The dielectric constant, loss tangent, leakage current density at 20 kV/cm, remnant polarization, and coercive field of the PT/BST15/PT film are 438, 0.025, 1.3 × 10-6 Acm-2, 2.46 μCcm-2, and 41 kVcm-1, respectively, at 25°C and 10 kHz. The PT/BST15/PT film is a candidate material for high sensitivity elements for uncooled, infrared, focal plane arrays (UFPAs) to be used at near ambient temperature.

AB - A PbTiO3/Ba0.85Sr0.15TiO3/PbTiO 3 (PT/BST15/PT) sandwich thin film has been prepared on Pt/Ti/SiO2/Si substrates by an improved sol-gel technique. It is found that such films under rapid thermal annealing at 700°C crystalline more favorably with the addition of a PbTiO3 layer. They possess a pure, perovskite-phase structure with a random orientation. The polarization-electric field (P-E) hysteresis loop and current-voltage (I-V) characteristics curves reveal that a PT/BST15/PT film exhibits good ferroelectricity at room temperature. However, no sharp peak, only a weak maximum, is observed in the curves of the dielectric constant versus temperature. The dielectric constant, loss tangent, leakage current density at 20 kV/cm, remnant polarization, and coercive field of the PT/BST15/PT film are 438, 0.025, 1.3 × 10-6 Acm-2, 2.46 μCcm-2, and 41 kVcm-1, respectively, at 25°C and 10 kHz. The PT/BST15/PT film is a candidate material for high sensitivity elements for uncooled, infrared, focal plane arrays (UFPAs) to be used at near ambient temperature.

KW - Dielectric properties

KW - Ferroelectric properties

KW - Sol-gel

KW - X-ray diffraction

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DO - 10.1007/s11664-003-0092-4

M3 - Article

AN - SCOPUS:0242367994

SN - 0361-5235

VL - 32

SP - 1085

EP - 1089

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 10

ER -

Crystallization behavior and ferroelectric properties of PbTiO₃/Ba_0.85Sr_0.15TiO₃/PbTiO ₃ sandwich thin film on Pt/Ti/SiO₂/Si substrates

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