@inproceedings{a1d2b8a25fc14e3ca1b9bd7f83b422bc,
title = "Critical Role of GIDL Current for Erase Operation in 3D Vertical FeFET and Compact Long-term FeFET Retention Model",
abstract = "We have investigated and revealed the critical role of GIDL current for efficient erase operation in 3D vertical FeFET by developing proper test structures and demonstrated a compact long-term FeFET retention model based on nucleation-limited switching, for the first time. We also proposed novel FeFET process for low voltage operation by controlling oxygen intrusion into the gate stack. This work contributes to the realization of high-density and low-power 3D vertical FeFET.",
author = "Fei Mo and Jiawen Xiang and Xiaoran Mei and Yoshiki Sawabe and Takuya Saraya and Toshiro Hiramoto and Su, \{Chun Jung\} and Hu, \{Vita Pi Ho\} and Masaharu Kobayashi",
note = "Publisher Copyright: {\textcopyright} 2021 JSAP; 41st Symposium on VLSI Technology, VLSI Technology 2021 ; Conference date: 13-06-2021 Through 19-06-2021",
year = "2021",
language = "English",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 Symposium on VLSI Technology, VLSI Technology 2021",
address = "United States",
}