Corrigendum to “Ferroelectric MXene-assisted BiFeO₃ based free-standing memristors for multifunctional non-volatile memory storage” [Carbon 221 (2024) 118931] (Carbon (2017) 119 (142–149), (S0008622317303433), (10.1016/j.carbon.2017.03.086))

The authors regret that the printed version of the above article contained an error in linking the affiliations of the co-authors. The correct and final version of author affiliations is as follows: Kubra Sattar,^a Rabia Tahir,^a Houbing Huang,^{b, c} Deji Akinwande,^d Syed Rizwan ^a* ^a Physics Characterization and Simulations Lab (PCSL), Department of Physics, School of Natural Sciences (SNS), National University of Sciences and Technology (NUST), Islamabad, 54000, Pakistan. ^b School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China. ^c Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China. ^d Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA. The authors would like to apologise for any inconvenience caused.