TY - JOUR
T1 - Correlation between the electronic structures and diffusion paths of interstitial defects in semiconductors
T2 - The case of CdTe
AU - Ma, Jie
AU - Yang, Jihui
AU - Wei, Su Huai
AU - Da Silva, Juarez L.F.
N1 - Publisher Copyright:
© 2014 American Physical Society.
PY - 2014/10/30
Y1 - 2014/10/30
N2 - Using first-principles calculations, we study the diffusions of interstitial defects Cd, Cu, Te, and Cl in CdTe. We find that the diffusion behavior is strongly correlated with the electronic structure of the interstitial diffuser.
AB - Using first-principles calculations, we study the diffusions of interstitial defects Cd, Cu, Te, and Cl in CdTe. We find that the diffusion behavior is strongly correlated with the electronic structure of the interstitial diffuser.
UR - http://www.scopus.com/inward/record.url?scp=84912051589&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.90.155208
DO - 10.1103/PhysRevB.90.155208
M3 - Article
AN - SCOPUS:84912051589
SN - 1098-0121
VL - 90
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 15
M1 - 155208
ER -