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Copper vapor-assisted growth of hexagonal graphene domains on silica islands

  • Jun Li
  • , Chengmin Shen*
  • , Yande Que
  • , Yuan Tian
  • , Lili Jiang
  • , Deliang Bao
  • , Yeliang Wang
  • , Shixuan Du
  • , Hong Jun Gao
  • *Corresponding author for this work
  • CAS - Institute of Physics
  • University of Chinese Academy of Sciences

Research output: Contribution to journalArticlepeer-review

Abstract

Silica (SiO2) islands with a dendritic structure were prepared on polycrystalline copper foil, using silane (SiH4) as a precursor, by annealing at high temperature. Assisted by copper vapor from bare sections of the foil, single-layer hexagonal graphene domains were grown directly on the SiO2 islands by chemical vapor deposition. Scanning electron microscopy, atomic force microscopy, Raman spectra, and X-ray photoelectron spectroscopy confirm that hexagonal graphene domains, each measuring several microns, were synthesized on the silica islands.

Original languageEnglish
Article number023106
JournalApplied Physics Letters
Volume109
Issue number2
DOIs
Publication statusPublished - 11 Jul 2016
Externally publishedYes

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