Abstract
In this work, we have demonstrated the synthesis of high-quality monolayered α-In2Se3 using physical vapor deposition method under atmospheric pressure. The quality of the In2Se3 atomic layers has been confirmed by complementary characterization technologies such as Raman/photoluminescence spectroscopies and atomic force microscope. The atomically resolved images have been obtained by the annular dark-field scanning transmission electron microscope. The field-effect transistors have been fabricated using the atomically layered In2Se3 and exhibit p-type semiconducting behaviors with the mobility up to 2.5 cm2/ Vs. The In2Se3 layers also show a good photoresponsivity of 340A/W, as well as 6 ms response time for the rise and 12 ms for the fall. These results make In2Se3 atomic layers a promising candidate for the optoelectronic and photosensitive device applications.
Original language | English |
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Pages (from-to) | 6400-6405 |
Number of pages | 6 |
Journal | Nano Letters |
Volume | 15 |
Issue number | 10 |
DOIs | |
Publication status | Published - 14 Oct 2015 |
Externally published | Yes |
Keywords
- 2D materials
- InSe monolayer
- PVD
- high mobility