Controlled Synthesis of High-Quality Monolayered α-In2Se3 via Physical Vapor Deposition

Jiadong Zhou, Qingsheng Zeng, Danhui Lv, Linfeng Sun, Lin Niu, Wei Fu, Fucai Liu, Zexiang Shen, Chuanhong Jin*, Zheng Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

272 Citations (Scopus)

Abstract

In this work, we have demonstrated the synthesis of high-quality monolayered α-In2Se3 using physical vapor deposition method under atmospheric pressure. The quality of the In2Se3 atomic layers has been confirmed by complementary characterization technologies such as Raman/photoluminescence spectroscopies and atomic force microscope. The atomically resolved images have been obtained by the annular dark-field scanning transmission electron microscope. The field-effect transistors have been fabricated using the atomically layered In2Se3 and exhibit p-type semiconducting behaviors with the mobility up to 2.5 cm2/ Vs. The In2Se3 layers also show a good photoresponsivity of 340A/W, as well as 6 ms response time for the rise and 12 ms for the fall. These results make In2Se3 atomic layers a promising candidate for the optoelectronic and photosensitive device applications.

Original languageEnglish
Pages (from-to)6400-6405
Number of pages6
JournalNano Letters
Volume15
Issue number10
DOIs
Publication statusPublished - 14 Oct 2015
Externally publishedYes

Keywords

  • 2D materials
  • InSe monolayer
  • PVD
  • high mobility

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