Compositionally-graded ferroelectric thin films by solution epitaxy produce excellent dielectric stability

Ruian Zhang; Chen Lin; Hongliang Dong; Haojie Han; Yu Song; Yiran Sun; Yue Wang; Zijun Zhang; Xiaohe Miao; Yongjun Wu; Zhe Ren; Qiaoshi Zeng; Houbing Huang; Jing Ma; He Tian; Zhaohui Ren; Gaorong Han

doi:10.1038/s41467-024-55411-7

Compositionally-graded ferroelectric thin films by solution epitaxy produce excellent dielectric stability

Ruian Zhang, Chen Lin, Hongliang Dong, Haojie Han, Yu Song, Yiran Sun, Yue Wang, Zijun Zhang, Xiaohe Miao, Yongjun Wu, Zhe Ren, Qiaoshi Zeng^*, Houbing Huang, Jing Ma, He Tian^*, Zhaohui Ren^*, Gaorong Han^*

^*Corresponding author for this work

Advanced Research Institute of Multidisciplinary Science

Research output: Contribution to journal › Article › peer-review

Abstract

The composition in ferroelectric oxide films is decisive for optimizing properties and device performances. Controlling a composition distribution in these films by a facile approach is thus highly desired. In this work, we report a solution epitaxy of PbZr_xTi_1−xO₃ films with a continuous gradient of Zr concentration, realized by a competitive growth at ~220 °C. These intriguing films demonstrate a frequency-independent of dielectric permittivity below 100 kHz from room-temperature to 280 °C. In particular, the permittivity of the films can be largely regulated from 100 to 50 by slightly varying Zr compositional gradient. These results were revealed to arise from a built-in electric field within the films due to a coupling between the composition gradient and unidirectional spontaneous polarization. Our findings may pave a way to prepare compositionally-graded ferroelectric films by a solution approach, which is promising for practical dielectric, pyroelectric and photoelectric technical applications.

Original language	English
Article number	98
Journal	Nature Communications
Volume	16
Issue number	1
DOIs	https://doi.org/10.1038/s41467-024-55411-7
Publication status	Published - Dec 2025

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title = "Compositionally-graded ferroelectric thin films by solution epitaxy produce excellent dielectric stability",

abstract = "The composition in ferroelectric oxide films is decisive for optimizing properties and device performances. Controlling a composition distribution in these films by a facile approach is thus highly desired. In this work, we report a solution epitaxy of PbZrxTi1−xO3 films with a continuous gradient of Zr concentration, realized by a competitive growth at \textasciitilde{}220 °C. These intriguing films demonstrate a frequency-independent of dielectric permittivity below 100 kHz from room-temperature to 280 °C. In particular, the permittivity of the films can be largely regulated from 100 to 50 by slightly varying Zr compositional gradient. These results were revealed to arise from a built-in electric field within the films due to a coupling between the composition gradient and unidirectional spontaneous polarization. Our findings may pave a way to prepare compositionally-graded ferroelectric films by a solution approach, which is promising for practical dielectric, pyroelectric and photoelectric technical applications.",

author = "Ruian Zhang and Chen Lin and Hongliang Dong and Haojie Han and Yu Song and Yiran Sun and Yue Wang and Zijun Zhang and Xiaohe Miao and Yongjun Wu and Zhe Ren and Qiaoshi Zeng and Houbing Huang and Jing Ma and He Tian and Zhaohui Ren and Gaorong Han",

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doi = "10.1038/s41467-024-55411-7",

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T1 - Compositionally-graded ferroelectric thin films by solution epitaxy produce excellent dielectric stability

AU - Zhang, Ruian

AU - Lin, Chen

AU - Dong, Hongliang

AU - Han, Haojie

AU - Song, Yu

AU - Sun, Yiran

AU - Wang, Yue

AU - Zhang, Zijun

AU - Miao, Xiaohe

AU - Wu, Yongjun

AU - Ren, Zhe

AU - Zeng, Qiaoshi

AU - Huang, Houbing

AU - Ma, Jing

AU - Tian, He

AU - Ren, Zhaohui

AU - Han, Gaorong

PY - 2025/12

Y1 - 2025/12

N2 - The composition in ferroelectric oxide films is decisive for optimizing properties and device performances. Controlling a composition distribution in these films by a facile approach is thus highly desired. In this work, we report a solution epitaxy of PbZrxTi1−xO3 films with a continuous gradient of Zr concentration, realized by a competitive growth at ~220 °C. These intriguing films demonstrate a frequency-independent of dielectric permittivity below 100 kHz from room-temperature to 280 °C. In particular, the permittivity of the films can be largely regulated from 100 to 50 by slightly varying Zr compositional gradient. These results were revealed to arise from a built-in electric field within the films due to a coupling between the composition gradient and unidirectional spontaneous polarization. Our findings may pave a way to prepare compositionally-graded ferroelectric films by a solution approach, which is promising for practical dielectric, pyroelectric and photoelectric technical applications.

AB - The composition in ferroelectric oxide films is decisive for optimizing properties and device performances. Controlling a composition distribution in these films by a facile approach is thus highly desired. In this work, we report a solution epitaxy of PbZrxTi1−xO3 films with a continuous gradient of Zr concentration, realized by a competitive growth at ~220 °C. These intriguing films demonstrate a frequency-independent of dielectric permittivity below 100 kHz from room-temperature to 280 °C. In particular, the permittivity of the films can be largely regulated from 100 to 50 by slightly varying Zr compositional gradient. These results were revealed to arise from a built-in electric field within the films due to a coupling between the composition gradient and unidirectional spontaneous polarization. Our findings may pave a way to prepare compositionally-graded ferroelectric films by a solution approach, which is promising for practical dielectric, pyroelectric and photoelectric technical applications.

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DO - 10.1038/s41467-024-55411-7

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SN - 2041-1723

VL - 16

JO - Nature Communications

JF - Nature Communications

IS - 1

M1 - 98

ER -

Compositionally-graded ferroelectric thin films by solution epitaxy produce excellent dielectric stability

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