Composition design and oxidation mechanism of quaternary single-phase (HfZrTaCr)B2: Phase evolution and synergistic CrTaO4@(Hf, Zr)O2/B2O3 dual diffusion barrier at elevated temperatures

Wenjun Li, Zhao Hui Zhang*, Xiaotong Jia, Jinzhao Zhou, Qiang Wang, Xingwang Cheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In this study, a series of equimolar quaternary single-phase high-entropy diborides, (HfZrTaTm)B2 (Tm = Ti, V, Cr, Nb), were systematically designed and synthesized, with a focus on investigating their oxidation behavior at intermediate to high temperatures. Their performance was compared with that of the conventional quinary system (HfZrTaTiNb)B2. The results revealed that the quaternary systems exhibit excellent oxidation resistance, with (HfZrTaCr)B2 showing the best performance—demonstrating a weight gain of only 2.573 % after thermogravimetry oxidation at 1400 ℃, representing an 81.09 % reduction compared to the quinary (HfZrTaTiNb)B2. Oxidation mechanism studies reveal that (HfZrTaCr)B2 forms a dense dual-layer protective structure, where CrTaO4 precipitates fill the pores within the (Hf, Zr)O2 oxide skeleton and synergize with the molten B2O3 phase to effectively block oxygen diffusion. In (HfZrTaV)B2, high-field-strength cations V⁵⁺ help suppress B2O3 volatilization by stabilizing the glass phase. In contrast, the Ti/Nb-containing (HfZrTaTiNb)B2 system forms porous and isolated oxides, which compromise the continuity of the protective layer and lead to accelerated oxidation. This work provides a new compositional optimization strategy for designing high-entropy ceramics with superior ultra-high-temperature oxidation resistance.

Original languageEnglish
Article number183814
JournalJournal of Alloys and Compounds
Volume1041
DOIs
Publication statusPublished - 10 Oct 2025

Keywords

  • Cation field strength
  • High-entropy diborides
  • Oxidation mechanism
  • Oxidation resistance
  • Protective layer
  • Quaternary single-phase ceramics

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