Complex transport behavior accompanying domain switching in La _0.1Bi _0.9FeO ₃ sandwiched capacitors

Polarization-modulated resistive switching and fatigue behaviors of the Ag/La _0.1Bi _0.9FeO ₃/La _0.7Sr _0.3MnO ₃ capacitors have been investigated. The device resistance is found to show a V-shaped dependence on poling voltage, and the lowest resistance appears at the voltage corresponding to the coercive field of La _0.1Bi _0.9FeO ₃. Based on this relation, three distinct resistance states can be achieved by applying appropriate pulse trains, which manifests a potential application in high-density storage technology. The fatigue properties of the sample under repeated bipolar or unipolar pulses were further analyzed. Bipolar pulses enhance the rectifying characters of the current-voltage relation, whereas unipolar pulses produce a reverse effect. Based on impedance analysis, we propose the formation of leakage paths along conductive domain walls, and it is the domain reconstruction during repeated polarization flipping that results in the complex transport behavior observed.