Colossal dielectric constant and interfacial charge polarization in a polymer-derived amorphous silicon carbonitride

Xuqin Li; Feng Chen; Yiguang Wang

doi:10.1016/j.ceramint.2017.05.337

Colossal dielectric constant and interfacial charge polarization in a polymer-derived amorphous silicon carbonitride

Xuqin Li
, Feng Chen
, Yiguang Wang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

The dielectric properties of a polymer-derived amorphous silicon carbonitride were measured at different frequencies and temperatures. The results revealed that the material underwent an interfacial-charge polarization process. This process resulted in an S-shaped frequency dependence of the dielectric constant that reached a colossal value of 2 × 10⁴ at room temperature. With regard to the effect of the temperature on the dielectric properties of this material, the dielectric loss peak corresponding to the interfacial-charge polarization process shifted to higher frequencies with temperature by following a 3-dimentional (3D) hopping mechanism. The unique bi-phased amorphous structure of this material accounted for the observed results.

Original language	English
Pages (from-to)	11623-11626
Number of pages	4
Journal	Ceramics International
Volume	43
Issue number	15
DOIs	https://doi.org/10.1016/j.ceramint.2017.05.337
Publication status	Published - 15 Oct 2017
Externally published	Yes

Keywords

3-dimentional hopping mechanism
Dielectric properties
Interfacial charge polarization
α-SiCN

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10.1016/j.ceramint.2017.05.337

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title = "Colossal dielectric constant and interfacial charge polarization in a polymer-derived amorphous silicon carbonitride",

abstract = "The dielectric properties of a polymer-derived amorphous silicon carbonitride were measured at different frequencies and temperatures. The results revealed that the material underwent an interfacial-charge polarization process. This process resulted in an S-shaped frequency dependence of the dielectric constant that reached a colossal value of 2 × 104 at room temperature. With regard to the effect of the temperature on the dielectric properties of this material, the dielectric loss peak corresponding to the interfacial-charge polarization process shifted to higher frequencies with temperature by following a 3-dimentional (3D) hopping mechanism. The unique bi-phased amorphous structure of this material accounted for the observed results.",

keywords = "3-dimentional hopping mechanism, Dielectric properties, Interfacial charge polarization, α-SiCN",

author = "Xuqin Li and Feng Chen and Yiguang Wang",

note = "Publisher Copyright: {\textcopyright} 2017",

year = "2017",

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day = "15",

doi = "10.1016/j.ceramint.2017.05.337",

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T1 - Colossal dielectric constant and interfacial charge polarization in a polymer-derived amorphous silicon carbonitride

AU - Li, Xuqin

AU - Chen, Feng

AU - Wang, Yiguang

PY - 2017/10/15

Y1 - 2017/10/15

N2 - The dielectric properties of a polymer-derived amorphous silicon carbonitride were measured at different frequencies and temperatures. The results revealed that the material underwent an interfacial-charge polarization process. This process resulted in an S-shaped frequency dependence of the dielectric constant that reached a colossal value of 2 × 104 at room temperature. With regard to the effect of the temperature on the dielectric properties of this material, the dielectric loss peak corresponding to the interfacial-charge polarization process shifted to higher frequencies with temperature by following a 3-dimentional (3D) hopping mechanism. The unique bi-phased amorphous structure of this material accounted for the observed results.

AB - The dielectric properties of a polymer-derived amorphous silicon carbonitride were measured at different frequencies and temperatures. The results revealed that the material underwent an interfacial-charge polarization process. This process resulted in an S-shaped frequency dependence of the dielectric constant that reached a colossal value of 2 × 104 at room temperature. With regard to the effect of the temperature on the dielectric properties of this material, the dielectric loss peak corresponding to the interfacial-charge polarization process shifted to higher frequencies with temperature by following a 3-dimentional (3D) hopping mechanism. The unique bi-phased amorphous structure of this material accounted for the observed results.

KW - 3-dimentional hopping mechanism

KW - Dielectric properties

KW - Interfacial charge polarization

KW - α-SiCN

UR - https://www.scopus.com/pages/publications/85020452653

U2 - 10.1016/j.ceramint.2017.05.337

DO - 10.1016/j.ceramint.2017.05.337

M3 - Article

AN - SCOPUS:85020452653

SN - 0272-8842

VL - 43

SP - 11623

EP - 11626

JO - Ceramics International

JF - Ceramics International

IS - 15

ER -

Colossal dielectric constant and interfacial charge polarization in a polymer-derived amorphous silicon carbonitride

Abstract

Keywords

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