Chemical vapor deposition synthesis of V-doped MoS₂

Van der Waals coupling with different stacking configurations can significantly affect the optical and electronic properties of ultrathin two-dimensional (2D) materials, which is an effective way to tune device performance. Herein, we report a salt-assisted chemical vapor deposition method for the synthesis of bilayer V-doped MoS₂ with 2H and 3R phases, which are demonstrated by the second harmonic generation and scanning transmission electron microscopy. Notably, the mobility of the 3R phase V-doped MoS₂ is 6.2% higher than that of the 2H phase. Through first-principles calculations, we further reveal that this particular behavior is attributed to the stronger interlayer coupling of 3R compared to the 2H stacking configuration. This research can be further generalized to other transition metal chalcogenides and will contribute to the development of electronic devices based on 2D materials in the future.