Charge state effect on Si K X-ray emission induced by Iq+ ions impacting

Yu Lei; Yongtao Zhao; Rui Cheng; Xianming Zhou; Yuanbo Sun; Xing Wang; Yuyu Wang; Jieru Ren; Yongfeng Li; Yang Yu; Shidong Liu; Ge Xu

doi:10.1088/1742-6596/488/13/132038

Charge state effect on Si K X-ray emission induced by I^q+ ions impacting

Yu Lei
, Yongtao Zhao
, Rui Cheng
, Xianming Zhou
, Yuanbo Sun
, Xing Wang
, Yuyu Wang
, Jieru Ren
, Yongfeng Li
, Yang Yu
, Shidong Liu
, Ge Xu

CAS - Institute of Modern Physics
University of Chinese Academy of Sciences

Research output: Contribution to journal › Conference article › peer-review

Abstract

K X-ray emission of Si induced by I^q+ (q=20, 22, 25) ion impact has been investigated. The results show a much higher intensity of X-ray emission for I²⁵⁺ ions bombardment compared to I²⁰⁺ and I²²⁺ ions. The experimental data are explained within the framework of 3dπ, δ-3dσ rotational coupling.

Original language	English
Article number	132038
Journal	Journal of Physics: Conference Series
Volume	488
Issue number	SECTION 13
DOIs	https://doi.org/10.1088/1742-6596/488/13/132038
Publication status	Published - 2014
Externally published	Yes
Event	28th International Conference on Photonic, Electronic and Atomic Collisions, ICPEAC 2013 - Lanzhou, China Duration: 24 Jul 2013 → 30 Jul 2013

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10.1088/1742-6596/488/13/132038

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@article{1a71410718694ed2827f7c4c925adf27,

title = "Charge state effect on Si K X-ray emission induced by Iq+ ions impacting",

abstract = "K X-ray emission of Si induced by Iq+ (q=20, 22, 25) ion impact has been investigated. The results show a much higher intensity of X-ray emission for I25+ ions bombardment compared to I20+ and I22+ ions. The experimental data are explained within the framework of 3dπ, δ-3dσ rotational coupling.",

author = "Yu Lei and Yongtao Zhao and Rui Cheng and Xianming Zhou and Yuanbo Sun and Xing Wang and Yuyu Wang and Jieru Ren and Yongfeng Li and Yang Yu and Shidong Liu and Ge Xu",

year = "2014",

doi = "10.1088/1742-6596/488/13/132038",

language = "English",

volume = "488",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing Ltd.",

number = "SECTION 13",

note = "28th International Conference on Photonic, Electronic and Atomic Collisions, ICPEAC 2013 ; Conference date: 24-07-2013 Through 30-07-2013",

}

TY - JOUR

T1 - Charge state effect on Si K X-ray emission induced by Iq+ ions impacting

AU - Lei, Yu

AU - Zhao, Yongtao

AU - Cheng, Rui

AU - Zhou, Xianming

AU - Sun, Yuanbo

AU - Wang, Xing

AU - Wang, Yuyu

AU - Ren, Jieru

AU - Li, Yongfeng

AU - Yu, Yang

AU - Liu, Shidong

AU - Xu, Ge

PY - 2014

Y1 - 2014

N2 - K X-ray emission of Si induced by Iq+ (q=20, 22, 25) ion impact has been investigated. The results show a much higher intensity of X-ray emission for I25+ ions bombardment compared to I20+ and I22+ ions. The experimental data are explained within the framework of 3dπ, δ-3dσ rotational coupling.

AB - K X-ray emission of Si induced by Iq+ (q=20, 22, 25) ion impact has been investigated. The results show a much higher intensity of X-ray emission for I25+ ions bombardment compared to I20+ and I22+ ions. The experimental data are explained within the framework of 3dπ, δ-3dσ rotational coupling.

UR - https://www.scopus.com/pages/publications/84903750704

U2 - 10.1088/1742-6596/488/13/132038

DO - 10.1088/1742-6596/488/13/132038

M3 - Conference article

AN - SCOPUS:84903750704

SN - 1742-6588

VL - 488

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - SECTION 13

M1 - 132038

T2 - 28th International Conference on Photonic, Electronic and Atomic Collisions, ICPEAC 2013

Y2 - 24 July 2013 through 30 July 2013

ER -

Charge state effect on Si K X-ray emission induced by I^q+ ions impacting

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