Characterization of highly (117)-oriented Bi3.25La0.75Ti3O12 thin films prepared by rf-magnetron sputtering technique

Shuai Ma; Xingwang Cheng; Zhaolong Ma; Zhijun Xu; Ruiqing Chu

doi:10.1016/j.ssc.2018.04.011

Characterization of highly (117)-oriented Bi_3.25La_0.75Ti₃O₁₂ thin films prepared by rf-magnetron sputtering technique

Shuai Ma, Xingwang Cheng^*, Zhaolong Ma, Zhijun Xu, Ruiqing Chu

^*Corresponding author for this work

School of Material Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Ferroelectric Bi_3.25La_0.75Ti₃O₁₂ (BLT) thin films were deposited on Pt(111)/Ti/SiO₂/Si substrates at 400 °C using rf-magnetron sputtering method. The microstructures were studied by X-ray diffraction, scanning electron microscopy and energy dispersive spectrometer. The as-deposited thin film is amorphous, while transformed to microcrystalline and well crystalline states after annealing at 650 °C and 750 °C, respectively. After annealing at 750 °C, the polycrystalline BLT thin film showed plated-like grains all with (117)-preferred orientation. Analyses of ferroelectric properties indicated that, comparing with the as-deposited thin film, the highly (117)-oriented crystalline thin film exhibited well-saturated hysteresis loops with a superior remnant polarization (2P_r) of 30.7 μC/cm².

Original language	English
Pages (from-to)	31-35
Number of pages	5
Journal	Solid State Communications
Volume	278
DOIs	https://doi.org/10.1016/j.ssc.2018.04.011
Publication status	Published - Sept 2018

Keywords

A. BLT thin films
B. rf-magnetron sputtering
C. (117)-oriented crystalline
D. Ferroelectric properties

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10.1016/j.ssc.2018.04.011

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title = "Characterization of highly (117)-oriented Bi3.25La0.75Ti3O12 thin films prepared by rf-magnetron sputtering technique",

abstract = "Ferroelectric Bi3.25La0.75Ti3O12 (BLT) thin films were deposited on Pt(111)/Ti/SiO2/Si substrates at 400 °C using rf-magnetron sputtering method. The microstructures were studied by X-ray diffraction, scanning electron microscopy and energy dispersive spectrometer. The as-deposited thin film is amorphous, while transformed to microcrystalline and well crystalline states after annealing at 650 °C and 750 °C, respectively. After annealing at 750 °C, the polycrystalline BLT thin film showed plated-like grains all with (117)-preferred orientation. Analyses of ferroelectric properties indicated that, comparing with the as-deposited thin film, the highly (117)-oriented crystalline thin film exhibited well-saturated hysteresis loops with a superior remnant polarization (2Pr) of 30.7 μC/cm2.",

keywords = "A. BLT thin films, B. rf-magnetron sputtering, C. (117)-oriented crystalline, D. Ferroelectric properties",

author = "Shuai Ma and Xingwang Cheng and Zhaolong Ma and Zhijun Xu and Ruiqing Chu",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier Ltd",

year = "2018",

month = sep,

doi = "10.1016/j.ssc.2018.04.011",

language = "English",

volume = "278",

pages = "31--35",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd.",

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TY - JOUR

T1 - Characterization of highly (117)-oriented Bi3.25La0.75Ti3O12 thin films prepared by rf-magnetron sputtering technique

AU - Ma, Shuai

AU - Cheng, Xingwang

AU - Ma, Zhaolong

AU - Xu, Zhijun

AU - Chu, Ruiqing

PY - 2018/9

Y1 - 2018/9

N2 - Ferroelectric Bi3.25La0.75Ti3O12 (BLT) thin films were deposited on Pt(111)/Ti/SiO2/Si substrates at 400 °C using rf-magnetron sputtering method. The microstructures were studied by X-ray diffraction, scanning electron microscopy and energy dispersive spectrometer. The as-deposited thin film is amorphous, while transformed to microcrystalline and well crystalline states after annealing at 650 °C and 750 °C, respectively. After annealing at 750 °C, the polycrystalline BLT thin film showed plated-like grains all with (117)-preferred orientation. Analyses of ferroelectric properties indicated that, comparing with the as-deposited thin film, the highly (117)-oriented crystalline thin film exhibited well-saturated hysteresis loops with a superior remnant polarization (2Pr) of 30.7 μC/cm2.

AB - Ferroelectric Bi3.25La0.75Ti3O12 (BLT) thin films were deposited on Pt(111)/Ti/SiO2/Si substrates at 400 °C using rf-magnetron sputtering method. The microstructures were studied by X-ray diffraction, scanning electron microscopy and energy dispersive spectrometer. The as-deposited thin film is amorphous, while transformed to microcrystalline and well crystalline states after annealing at 650 °C and 750 °C, respectively. After annealing at 750 °C, the polycrystalline BLT thin film showed plated-like grains all with (117)-preferred orientation. Analyses of ferroelectric properties indicated that, comparing with the as-deposited thin film, the highly (117)-oriented crystalline thin film exhibited well-saturated hysteresis loops with a superior remnant polarization (2Pr) of 30.7 μC/cm2.

KW - A. BLT thin films

KW - B. rf-magnetron sputtering

KW - C. (117)-oriented crystalline

KW - D. Ferroelectric properties

UR - http://www.scopus.com/inward/record.url?scp=85047265483&partnerID=8YFLogxK

U2 - 10.1016/j.ssc.2018.04.011

DO - 10.1016/j.ssc.2018.04.011

M3 - Article

AN - SCOPUS:85047265483

SN - 0038-1098

VL - 278

SP - 31

EP - 35

JO - Solid State Communications

JF - Solid State Communications

ER -

Characterization of highly (117)-oriented Bi_3.25La_0.75Ti₃O₁₂ thin films prepared by rf-magnetron sputtering technique

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Keywords

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