Cd-rich and Te-rich low-temperature photoluminescence in cadmium telluride

D. S. Albin; D. Kuciauskas; J. Ma; W. K. Metzger; J. M. Burst; H. R. Moutinho; P. C. Dippo

doi:10.1063/1.4867533

Cd-rich and Te-rich low-temperature photoluminescence in cadmium telluride

D. S. Albin^*
, D. Kuciauskas
, J. Ma
, W. K. Metzger
, J. M. Burst
, H. R. Moutinho
, P. C. Dippo

^*Corresponding author for this work

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

Low-temperature photoluminescence emission spectra were measured in cadmium telluride (CdTe) samples in which composition was varied to promote either Cd or Te-rich stoichiometry. The ability to monitor stoichiometry is important, since it has been shown to impact carrier recombination. Te-rich samples show transitions corresponding to acceptor-bound excitons (∼1.58 eV) and free-electron to acceptor transitions (∼1.547 eV). In addition to acceptor-bound excitons, Cd-rich samples show transitions assigned to donor-bound excitons (1.591 eV) and Te vacancies at 1.552 eV. Photoluminescence is a noninvasive way to monitor stoichiometric shifts induced by post-deposition anneals in polycrystalline CdTe thin films deposited by close-spaced sublimation.

Original language	English
Article number	092109
Journal	Applied Physics Letters
Volume	104
Issue number	9
DOIs	https://doi.org/10.1063/1.4867533
Publication status	Published - 3 Mar 2014
Externally published	Yes

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title = "Cd-rich and Te-rich low-temperature photoluminescence in cadmium telluride",

abstract = "Low-temperature photoluminescence emission spectra were measured in cadmium telluride (CdTe) samples in which composition was varied to promote either Cd or Te-rich stoichiometry. The ability to monitor stoichiometry is important, since it has been shown to impact carrier recombination. Te-rich samples show transitions corresponding to acceptor-bound excitons (∼1.58 eV) and free-electron to acceptor transitions (∼1.547 eV). In addition to acceptor-bound excitons, Cd-rich samples show transitions assigned to donor-bound excitons (1.591 eV) and Te vacancies at 1.552 eV. Photoluminescence is a noninvasive way to monitor stoichiometric shifts induced by post-deposition anneals in polycrystalline CdTe thin films deposited by close-spaced sublimation.",

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T1 - Cd-rich and Te-rich low-temperature photoluminescence in cadmium telluride

AU - Albin, D. S.

AU - Kuciauskas, D.

AU - Ma, J.

AU - Metzger, W. K.

AU - Burst, J. M.

AU - Moutinho, H. R.

AU - Dippo, P. C.

PY - 2014/3/3

Y1 - 2014/3/3

N2 - Low-temperature photoluminescence emission spectra were measured in cadmium telluride (CdTe) samples in which composition was varied to promote either Cd or Te-rich stoichiometry. The ability to monitor stoichiometry is important, since it has been shown to impact carrier recombination. Te-rich samples show transitions corresponding to acceptor-bound excitons (∼1.58 eV) and free-electron to acceptor transitions (∼1.547 eV). In addition to acceptor-bound excitons, Cd-rich samples show transitions assigned to donor-bound excitons (1.591 eV) and Te vacancies at 1.552 eV. Photoluminescence is a noninvasive way to monitor stoichiometric shifts induced by post-deposition anneals in polycrystalline CdTe thin films deposited by close-spaced sublimation.

AB - Low-temperature photoluminescence emission spectra were measured in cadmium telluride (CdTe) samples in which composition was varied to promote either Cd or Te-rich stoichiometry. The ability to monitor stoichiometry is important, since it has been shown to impact carrier recombination. Te-rich samples show transitions corresponding to acceptor-bound excitons (∼1.58 eV) and free-electron to acceptor transitions (∼1.547 eV). In addition to acceptor-bound excitons, Cd-rich samples show transitions assigned to donor-bound excitons (1.591 eV) and Te vacancies at 1.552 eV. Photoluminescence is a noninvasive way to monitor stoichiometric shifts induced by post-deposition anneals in polycrystalline CdTe thin films deposited by close-spaced sublimation.

UR - https://www.scopus.com/pages/publications/84896767313

U2 - 10.1063/1.4867533

DO - 10.1063/1.4867533

M3 - Article

AN - SCOPUS:84896767313

SN - 0003-6951

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 092109

ER -

Cd-rich and Te-rich low-temperature photoluminescence in cadmium telluride

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