Abstract
Here we report catalyst-assisted growth of zinc nitride (Zn 3N 2 nanotowers on Ni-coated silicon substrate by nitridation of zinc powders precursor at 600 °C for reaction time of 240 minutes under NH 3 gas flow of 500 sccm inside horizontal tube furnace. XRD analysis of the as-prepared product revealed its cubic structure with lattice parameter a = 0.976 nm and SEM test showed its nanotower-like morphology. Energy dispersive X-ray spectroscopy (EDS) confirmed the chemical composition of the zinc nitride nanotowers. Room temperature photoluminescence (PL) spectrum of Zn 3N 2 nanotowers exhibited a broad ultraviolet (UV) emission band at 389 nm corresponding to near band edge emission of zinc nitride. This study indicates the potential of the zinc nitride for applications in the UV-light emission devices.
| Original language | English |
|---|---|
| Pages (from-to) | 35-39 |
| Number of pages | 5 |
| Journal | Science of Advanced Materials |
| Volume | 4 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Jan 2012 |
Keywords
- Nanostructure
- Optical properties
- Semiconductor
- X-ray diffraction
- Zinc nitride