TY - JOUR
T1 - Bright electroluminescent devices with tunable spectra obtained by strictly controlling the doping concentration of electron injection sensitizer
AU - Zhou, Liang
AU - Tang, Jinkui
AU - Guo, Zhiyong
AU - Feng, Jing
AU - Li, Xiaona
AU - Li, Xiyan
AU - Deng, Ruiping
AU - Zhang, Hongjie
PY - 2010/11
Y1 - 2010/11
N2 - In this paper, we report an efficient strategy to design bright blue and bluegreen electroluminescent (EL) devices by slightly doping tris(8-hydroxyquinoline) aluminum (Alq3) into N,N′-diphenyl-N, N′-bis(1-naphthyl)-1,1′-diphenyl-4,4′-diamine (NPB) as the light-emitting layer (EML). Bright EL devices with tunable spectra were obtained by strictly controlling the doping concentration of Alq3. With increasing current density, EL efficiencies of these devices increase first and then decrease gradually after reaching the maximum. Analyzing the current densityvoltage (J-V) characteristics of hole-only and electron-only devices, we found the presence of Alq3 molecules in EML not only facilitates the injection of electrons from hole block layer (HBL) into EML but also stays the transport of holes in EML, thus causing significant enhancement of EL efficiency and brightness due to improved carriers balance and broadening of recombination zone. More interestingly, the doping concentration of Alq3 strongly influences the injection and transport processes of electrons, thus determining the distribution of holes and electrons on NPB and Alq3 molecules.
AB - In this paper, we report an efficient strategy to design bright blue and bluegreen electroluminescent (EL) devices by slightly doping tris(8-hydroxyquinoline) aluminum (Alq3) into N,N′-diphenyl-N, N′-bis(1-naphthyl)-1,1′-diphenyl-4,4′-diamine (NPB) as the light-emitting layer (EML). Bright EL devices with tunable spectra were obtained by strictly controlling the doping concentration of Alq3. With increasing current density, EL efficiencies of these devices increase first and then decrease gradually after reaching the maximum. Analyzing the current densityvoltage (J-V) characteristics of hole-only and electron-only devices, we found the presence of Alq3 molecules in EML not only facilitates the injection of electrons from hole block layer (HBL) into EML but also stays the transport of holes in EML, thus causing significant enhancement of EL efficiency and brightness due to improved carriers balance and broadening of recombination zone. More interestingly, the doping concentration of Alq3 strongly influences the injection and transport processes of electrons, thus determining the distribution of holes and electrons on NPB and Alq3 molecules.
KW - Band bending
KW - Doping concentration
KW - Electroluminescence
KW - Electron injection
UR - http://www.scopus.com/inward/record.url?scp=78049421363&partnerID=8YFLogxK
U2 - 10.1016/j.jlumin.2010.07.003
DO - 10.1016/j.jlumin.2010.07.003
M3 - Article
AN - SCOPUS:78049421363
SN - 0022-2313
VL - 130
SP - 2265
EP - 2270
JO - Journal of Luminescence
JF - Journal of Luminescence
IS - 11
ER -