Bi-Deficiency Leading to High-Performance in Mg3(Sb,Bi)2-Based Thermoelectric Materials

Jing Wei Li, Weishu Liu*, Wei Xu, Hua Lu Zhuang, Zhijia Han, Feng Jiang, Peng Zhang, Haihua Hu, Hanbin Gao, Yilin Jiang, Bowen Cai, Jun Pei, Bin Su, Qian Li, Kei Hayashi, Hezhang Li, Yuzuru Miyazaki, Xingzhong Cao*, Qiang Zheng*, Jing Feng Li*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

43 Citations (Scopus)

Abstract

Mg3(Sb,Bi)2 is a potential nearly-room temperature thermoelectric compound composed of earth-abundant elements. However, complex defect tuning and exceptional microstructural control are required. Prior studies have confirmed the detrimental effect of Mg vacancies (VMg) in Mg3(Sb,Bi)2. This study proposes an approach to mitigating the negative scattering effect of VMg by Bi deficiency, synergistically modulating the electrical and thermal transport properties to enhance the thermoelectric performance. Positron annihilation spectrometry and Cs-corrected scanning transmission electron microscopy analyses indicated that the VMg tends to coalesce due to the introduced Bi vacancies (VBi). The defects created by Bi deficiency effectively weaken the scattering of electrons from the intrinsic VMg and enhance phonon scattering. A peak zT of 1.82 at 773 K and high conversion efficiency of 11.3% at ∆T = 473 K are achieved in the optimized composition of Mg3(Sb,Bi)2 by tuning the defect combination. This work demonstrates a feasible and effective approach to improving the performance of Mg3(Sb,Bi)2 as an emerging thermoelectric material.

Original languageEnglish
Article number2209119
JournalAdvanced Materials
Volume35
Issue number23
DOIs
Publication statusPublished - 8 Jun 2023
Externally publishedYes

Keywords

  • Mg(Sb,Bi)
  • defect engineering
  • lattice thermal conductivity
  • thermoelectric materials

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