Atomically Unveiling the Phase Evolution in Weakly Coupled Layered Transition-Metal Phosphorus Trichalcogenide by Chalcogen Doping

Wing Ni Cheng, Ruihuan Duan, Mengmeng Niu, Xiaocang Han, Song Huang, Yu Liang, Jun Zhao, Zheng Liu*, Jingsi Qiao*, Xiaoxu Zhao*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The stacking configuration significantly influences the properties of van der Waals (vdW) layered magnets by dictating crystallographic and magnetic symmetries. Transition-metal phosphorus trichalcogenides (MPX3, X = S, Se) intrinsically exhibit diverse stacking polytypes, being an optimal platform for magnetic phase engineering. Unlike MX2, where chalcogen doping has a minimal impact on stacking, MPX3 allows stacking control via elemental substitution. However, the atomic-scale mechanisms governing stacking variations remain unclear. Using scanning transmission electron microscopy (STEM) and density functional theory (DFT) calculations, we reveal that in 3d transition metal MPX3, tuning the S/Se ratio induces a transition from the C2/m to R3̅ phase due to modified interlayer S-S/Se-Se and P-P interactions. In contrast, stacking control becomes challenging for 4d CdPX3, due to relatively weak interlayer coupling. These insights provide a stacking basis for stacking polytypes in MPX3, paving the way for tuning magnetic couplings via stackingtronics.

Original languageEnglish
Pages (from-to)6244-6252
Number of pages9
JournalNano Letters
Volume25
Issue number15
DOIs
Publication statusPublished - 16 Apr 2025
Externally publishedYes

Keywords

  • 2D materials
  • Doping
  • Scanning transmission electron microscopy
  • Stacking engineering
  • Transition-metal phosphorus trichalcogenide

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