Application of silicon carbide diode in ultrasound high voltage pulse protection circuit

Zhou Shiyuan; Zhang Kai; Xiao Dinguo; Xu Chunguang; Yang Bo

doi:10.4028/www.scientific.net/AMM.290.115

Application of silicon carbide diode in ultrasound high voltage pulse protection circuit

Zhou Shiyuan^*, Zhang Kai, Xiao Dinguo, Xu Chunguang, Yang Bo

^*Corresponding author for this work

School of Mechanical Engineering

Beijing Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

SiC diode (Silicon Carbide Diode) is a newly commercial available Schottky barrier diode with zero reverse-recovery-time, which is a perfect candidate for fabricating high voltage pulse protection circuit in ultrasonic transceiver system. With SiC diode's high performance, the circuit can deliver 400 volts or higher voltage protection level, which is not an easy job for other kind of diodes. In this article, the theory of diode-bridge protection circuit is briefly discussed, and a SiC diode-bridge protection circuit was fabricated, and some experiments has been done to verify the feasibility of using SiC diodes in diode-bridge protection circuit.

Original language	English
Title of host publication	Spacecraft Structures, Materials and Mechanical Testing
Pages	115-119
Number of pages	5
DOIs	https://doi.org/10.4028/www.scientific.net/AMM.290.115
Publication status	Published - 2013
Event	2012 International Conference on Spacecraft Structures, Materials and Mechanical Testing, ICSSMMT 2012 - Xiamen, China Duration: 27 Dec 2012 → 28 Dec 2012

Publication series

Name	Applied Mechanics and Materials
Volume	290
ISSN (Print)	1660-9336
ISSN (Electronic)	1662-7482

Conference

Conference	2012 International Conference on Spacecraft Structures, Materials and Mechanical Testing, ICSSMMT 2012
Country/Territory	China
City	Xiamen
Period	27/12/12 → 28/12/12

Keywords

High voltage pulse
Protection circuit
Silicon carbide diode
Ultrasound

Access to Document

10.4028/www.scientific.net/AMM.290.115

Cite this

@inproceedings{01cbfe7c210e41f0895b5096546ded04,

title = "Application of silicon carbide diode in ultrasound high voltage pulse protection circuit",

abstract = "SiC diode (Silicon Carbide Diode) is a newly commercial available Schottky barrier diode with zero reverse-recovery-time, which is a perfect candidate for fabricating high voltage pulse protection circuit in ultrasonic transceiver system. With SiC diode's high performance, the circuit can deliver 400 volts or higher voltage protection level, which is not an easy job for other kind of diodes. In this article, the theory of diode-bridge protection circuit is briefly discussed, and a SiC diode-bridge protection circuit was fabricated, and some experiments has been done to verify the feasibility of using SiC diodes in diode-bridge protection circuit.",

keywords = "High voltage pulse, Protection circuit, Silicon carbide diode, Ultrasound",

author = "Zhou Shiyuan and Zhang Kai and Xiao Dinguo and Xu Chunguang and Yang Bo",

year = "2013",

doi = "10.4028/www.scientific.net/AMM.290.115",

language = "English",

isbn = "9783037856338",

series = "Applied Mechanics and Materials",

pages = "115--119",

booktitle = "Spacecraft Structures, Materials and Mechanical Testing",

note = "2012 International Conference on Spacecraft Structures, Materials and Mechanical Testing, ICSSMMT 2012 ; Conference date: 27-12-2012 Through 28-12-2012",

}

Shiyuan, Z, Kai, Z, Dinguo, X, Chunguang, X & Bo, Y 2013, Application of silicon carbide diode in ultrasound high voltage pulse protection circuit. in Spacecraft Structures, Materials and Mechanical Testing. Applied Mechanics and Materials, vol. 290, pp. 115-119, 2012 International Conference on Spacecraft Structures, Materials and Mechanical Testing, ICSSMMT 2012, Xiamen, China, 27/12/12. https://doi.org/10.4028/www.scientific.net/AMM.290.115

TY - GEN

T1 - Application of silicon carbide diode in ultrasound high voltage pulse protection circuit

AU - Shiyuan, Zhou

AU - Kai, Zhang

AU - Dinguo, Xiao

AU - Chunguang, Xu

AU - Bo, Yang

PY - 2013

Y1 - 2013

N2 - SiC diode (Silicon Carbide Diode) is a newly commercial available Schottky barrier diode with zero reverse-recovery-time, which is a perfect candidate for fabricating high voltage pulse protection circuit in ultrasonic transceiver system. With SiC diode's high performance, the circuit can deliver 400 volts or higher voltage protection level, which is not an easy job for other kind of diodes. In this article, the theory of diode-bridge protection circuit is briefly discussed, and a SiC diode-bridge protection circuit was fabricated, and some experiments has been done to verify the feasibility of using SiC diodes in diode-bridge protection circuit.

AB - SiC diode (Silicon Carbide Diode) is a newly commercial available Schottky barrier diode with zero reverse-recovery-time, which is a perfect candidate for fabricating high voltage pulse protection circuit in ultrasonic transceiver system. With SiC diode's high performance, the circuit can deliver 400 volts or higher voltage protection level, which is not an easy job for other kind of diodes. In this article, the theory of diode-bridge protection circuit is briefly discussed, and a SiC diode-bridge protection circuit was fabricated, and some experiments has been done to verify the feasibility of using SiC diodes in diode-bridge protection circuit.

KW - High voltage pulse

KW - Protection circuit

KW - Silicon carbide diode

KW - Ultrasound

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U2 - 10.4028/www.scientific.net/AMM.290.115

DO - 10.4028/www.scientific.net/AMM.290.115

M3 - Conference contribution

AN - SCOPUS:84874640889

SN - 9783037856338

T3 - Applied Mechanics and Materials

SP - 115

EP - 119

BT - Spacecraft Structures, Materials and Mechanical Testing

T2 - 2012 International Conference on Spacecraft Structures, Materials and Mechanical Testing, ICSSMMT 2012

Y2 - 27 December 2012 through 28 December 2012

ER -

Application of silicon carbide diode in ultrasound high voltage pulse protection circuit

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Keywords

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