Annealing a graphene oxide film to produce a free standing high conductive graphene film

Cheng Meng Chen; Jia Qi Huang; Qiang Zhang; Wen Zhao Gong; Quan Hong Yang; Mao Zhang Wang; Yong Gang Yang

doi:10.1016/j.carbon.2011.09.022

Annealing a graphene oxide film to produce a free standing high conductive graphene film

Cheng Meng Chen, Jia Qi Huang, Qiang Zhang^*, Wen Zhao Gong, Quan Hong Yang, Mao Zhang Wang, Yong Gang Yang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

314 Citations (Scopus)

Abstract

A free-standing graphene oxide film (GOF) obtained by self-assembly at a liquid/air interface was annealed in a confined space between two stacked substrates to form a free-standing highly conductive graphene film. Characterization indicates that the oxygen-containing functional groups (e.g. epoxy, carboxyl, and carbonyl) were removed as small molecules (e.g. H ₂O, CO₂, and CO) during the annealing, meanwhile the size of sp² domains in the film was decreased. When annealed between two stacked wafers, random interlayer expansion and fractional movement in the GOF were suppressed by the pressure-induced friction, which helps preserve the morphology of the film. The conjugation in the basal plane of graphene and π-π interactions between well stacked graphene sheets favor the transportation of charge carriers in the film, to produce a good electrical conductivity of the resulting free-standing reduced GOF (increased from 1.26 × 10^-5 to 272.3 S/cm).

Original language	English
Pages (from-to)	659-667
Number of pages	9
Journal	Carbon
Volume	50
Issue number	2
DOIs	https://doi.org/10.1016/j.carbon.2011.09.022
Publication status	Published - Feb 2012
Externally published	Yes

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10.1016/j.carbon.2011.09.022

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title = "Annealing a graphene oxide film to produce a free standing high conductive graphene film",

abstract = "A free-standing graphene oxide film (GOF) obtained by self-assembly at a liquid/air interface was annealed in a confined space between two stacked substrates to form a free-standing highly conductive graphene film. Characterization indicates that the oxygen-containing functional groups (e.g. epoxy, carboxyl, and carbonyl) were removed as small molecules (e.g. H 2O, CO2, and CO) during the annealing, meanwhile the size of sp2 domains in the film was decreased. When annealed between two stacked wafers, random interlayer expansion and fractional movement in the GOF were suppressed by the pressure-induced friction, which helps preserve the morphology of the film. The conjugation in the basal plane of graphene and π-π interactions between well stacked graphene sheets favor the transportation of charge carriers in the film, to produce a good electrical conductivity of the resulting free-standing reduced GOF (increased from 1.26 × 10-5 to 272.3 S/cm).",

author = "Chen, \{Cheng Meng\} and Huang, \{Jia Qi\} and Qiang Zhang and Gong, \{Wen Zhao\} and Yang, \{Quan Hong\} and Wang, \{Mao Zhang\} and Yang, \{Yong Gang\}",

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doi = "10.1016/j.carbon.2011.09.022",

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AU - Chen, Cheng Meng

AU - Huang, Jia Qi

AU - Zhang, Qiang

AU - Gong, Wen Zhao

AU - Yang, Quan Hong

AU - Wang, Mao Zhang

AU - Yang, Yong Gang

PY - 2012/2

Y1 - 2012/2

N2 - A free-standing graphene oxide film (GOF) obtained by self-assembly at a liquid/air interface was annealed in a confined space between two stacked substrates to form a free-standing highly conductive graphene film. Characterization indicates that the oxygen-containing functional groups (e.g. epoxy, carboxyl, and carbonyl) were removed as small molecules (e.g. H 2O, CO2, and CO) during the annealing, meanwhile the size of sp2 domains in the film was decreased. When annealed between two stacked wafers, random interlayer expansion and fractional movement in the GOF were suppressed by the pressure-induced friction, which helps preserve the morphology of the film. The conjugation in the basal plane of graphene and π-π interactions between well stacked graphene sheets favor the transportation of charge carriers in the film, to produce a good electrical conductivity of the resulting free-standing reduced GOF (increased from 1.26 × 10-5 to 272.3 S/cm).

AB - A free-standing graphene oxide film (GOF) obtained by self-assembly at a liquid/air interface was annealed in a confined space between two stacked substrates to form a free-standing highly conductive graphene film. Characterization indicates that the oxygen-containing functional groups (e.g. epoxy, carboxyl, and carbonyl) were removed as small molecules (e.g. H 2O, CO2, and CO) during the annealing, meanwhile the size of sp2 domains in the film was decreased. When annealed between two stacked wafers, random interlayer expansion and fractional movement in the GOF were suppressed by the pressure-induced friction, which helps preserve the morphology of the film. The conjugation in the basal plane of graphene and π-π interactions between well stacked graphene sheets favor the transportation of charge carriers in the film, to produce a good electrical conductivity of the resulting free-standing reduced GOF (increased from 1.26 × 10-5 to 272.3 S/cm).

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DO - 10.1016/j.carbon.2011.09.022

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VL - 50

SP - 659

EP - 667

JO - Carbon

JF - Carbon

IS - 2

ER -

Annealing a graphene oxide film to produce a free standing high conductive graphene film

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