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Anisotropic in-plane spin splitting in an asymmetric (001) GaAs/AlGaAs quantum well

  • Huiqi Ye
  • , Changcheng Hu
  • , Gang Wang
  • , Hongming Zhao
  • , Haitao Tian
  • , Xiuwen Zhang
  • , Wenxin Wang
  • , Baoli Liu*
  • *Corresponding author for this work
  • CAS - Institute of Physics
  • Jilin University
  • CAS - Institute of Semiconductors

Research output: Contribution to journalArticlepeer-review

Abstract

The in-plane spin splitting of conduction-band electron has been investigated in an asymmetric (001) GaAs/Al xGa 1-xAs quantum well by time-resolved Kerr rotation technique under a transverse magnetic field. The distinctive anisotropy of the spin splitting was observed while the temperature is below approximately 200 K. This anisotropy emerges from the combined effect of Dresselhaus spin-orbit coupling plus asymmetric potential gradients. We also exploit the temperature dependence of spin-splitting energy. Both the anisotropy of spin splitting and the in-plane effective g-factor decrease with increasing temperature.

Original languageEnglish
Article number520
Pages (from-to)1-5
Number of pages5
JournalNanoscale Research Letters
Volume6
DOIs
Publication statusPublished - 2011
Externally publishedYes

Keywords

  • Magnetic properties of nanostructures
  • Optical creation of spin polarized
  • Quantum beats
  • Spin-orbit coupling

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