Abstract
A basic structure and operation principles of self electro-optic effect device's (SEED's) are described. Its equivalent resistance-capacitance (RC) model is applied to obtain SEED's voltage-time (V-t) characteristic and voltage-radius (V-r) diffusion characteristic expressions. SEED's switch performances with different radiuses of input control beams are compared by simulation. Simulations reveal that SEED's switch characteristic can be effectively improved with a small input radius, and also SEED can only keep its excellent switch characteristic at the input light beam's center.
| Original language | English |
|---|---|
| Pages (from-to) | 127-130 |
| Number of pages | 4 |
| Journal | Beijing Youdian Xueyuan Xuebao/Journal of Beijing University of Posts And Telecommunications |
| Volume | 32 |
| Issue number | 3 |
| Publication status | Published - Jun 2009 |
| Externally published | Yes |
Keywords
- Diffusion characteristic
- Optical switch
- Quantum confined Stark effect
- Self electro-optic effect device's
- V-t characteristics
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