Analysis of multi-domain ferroelectric switching in BiFeO3 thin film using phase-field method

Guoping Cao; Ye Cao; Houbing Huang; Long Qing Chen; Xingqiao Ma

doi:10.1016/j.commatsci.2015.11.021

Analysis of multi-domain ferroelectric switching in BiFeO₃ thin film using phase-field method

Guoping Cao, Ye Cao, Houbing Huang, Long Qing Chen, Xingqiao Ma^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

A phase-field model is developed to elucidate the process of polarization switching in BiFeO₃ thin film. The results demonstrated an energy-favorable mechanism for domain switching path and revealed possible ferroelectric domain switching modes. It is shown that 71° switching is dominant among the three possible switching paths, namely 71°, 109° and 180° switching. This might provide significant references for the application of ferroelectric materials under electric fields.

Original language	English
Pages (from-to)	208-213
Number of pages	6
Journal	Computational Materials Science
Volume	115
DOIs	https://doi.org/10.1016/j.commatsci.2015.11.021
Publication status	Published - 1 Apr 2016
Externally published	Yes

Keywords

Bismuth ferrite
Ferroelectric
Phase-field method
Polarization switching

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10.1016/j.commatsci.2015.11.021

Cite this

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title = "Analysis of multi-domain ferroelectric switching in BiFeO3 thin film using phase-field method",

abstract = "A phase-field model is developed to elucidate the process of polarization switching in BiFeO3 thin film. The results demonstrated an energy-favorable mechanism for domain switching path and revealed possible ferroelectric domain switching modes. It is shown that 71° switching is dominant among the three possible switching paths, namely 71°, 109° and 180° switching. This might provide significant references for the application of ferroelectric materials under electric fields.",

keywords = "Bismuth ferrite, Ferroelectric, Phase-field method, Polarization switching",

author = "Guoping Cao and Ye Cao and Houbing Huang and Chen, \{Long Qing\} and Xingqiao Ma",

year = "2016",

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doi = "10.1016/j.commatsci.2015.11.021",

language = "English",

volume = "115",

pages = "208--213",

journal = "Computational Materials Science",

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TY - JOUR

T1 - Analysis of multi-domain ferroelectric switching in BiFeO3 thin film using phase-field method

AU - Cao, Guoping

AU - Cao, Ye

AU - Huang, Houbing

AU - Chen, Long Qing

AU - Ma, Xingqiao

PY - 2016/4/1

Y1 - 2016/4/1

N2 - A phase-field model is developed to elucidate the process of polarization switching in BiFeO3 thin film. The results demonstrated an energy-favorable mechanism for domain switching path and revealed possible ferroelectric domain switching modes. It is shown that 71° switching is dominant among the three possible switching paths, namely 71°, 109° and 180° switching. This might provide significant references for the application of ferroelectric materials under electric fields.

AB - A phase-field model is developed to elucidate the process of polarization switching in BiFeO3 thin film. The results demonstrated an energy-favorable mechanism for domain switching path and revealed possible ferroelectric domain switching modes. It is shown that 71° switching is dominant among the three possible switching paths, namely 71°, 109° and 180° switching. This might provide significant references for the application of ferroelectric materials under electric fields.

KW - Bismuth ferrite

KW - Ferroelectric

KW - Phase-field method

KW - Polarization switching

UR - https://www.scopus.com/pages/publications/84957043283

U2 - 10.1016/j.commatsci.2015.11.021

DO - 10.1016/j.commatsci.2015.11.021

M3 - Article

AN - SCOPUS:84957043283

SN - 0927-0256

VL - 115

SP - 208

EP - 213

JO - Computational Materials Science

JF - Computational Materials Science

ER -

Analysis of multi-domain ferroelectric switching in BiFeO₃ thin film using phase-field method

Abstract

Keywords

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