Abstract
The structure of high g-force microelectromechanical accelerometer was analyzed. These acceleorometers are fabricated using bulk-micromachining, surface micromachining, LIGA technologies, etc. Damping, packaging and mechanical structure are three main factors of a high g-force MEMS accelerometers. The sensing methods of these accelerometers involve piezoresistive, capacitive, piezoelectric, acoustic and optical sensing.
| Original language | English |
|---|---|
| Pages (from-to) | 273-275 |
| Number of pages | 3 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 4414 |
| DOIs | |
| Publication status | Published - 2001 |
| Event | International Conference on Sensor Technology (ISTC 2001) - Wuhan, China Duration: 10 Oct 2001 → 12 Oct 2001 |
Keywords
- High g-force
- MEMS accelerometer
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