An Ultrathin Ferroelectric Perovskite Oxide Layer for High-Performance Hole Transport Material Free Carbon Based Halide Perovskite Solar Cells

  • Yinglong Yang
  • , Zhenghao Liu
  • , Wai Kit Ng
  • , Lihua Zhang
  • , Hua Zhang
  • , Xiangyue Meng
  • , Yang Bai
  • , Shuang Xiao
  • , Teng Zhang
  • , Chen Hu
  • , Kam Sing Wong
  • , Shihe Yang*
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

125 Citations (Scopus)

Abstract

The hole transport material (HTM) free carbon based perovskite solar cells (C-PSCs) are promising for its manufactural simplicity, but they currently suffer from low power conversion efficiencies (PCE) largely because of the voltage loss. Here, a new strategy to increase the PCE by incorporating an ultrathin ferroelectric oxide PbTiO3 layer between the electron transport material and the halide perovskite is reported. The resulting C-PSCs have achieved PCEs up to 16.37%, which is the highest record for HTM-free C-PSCs to date, mainly ascribable to the ferroelectric layer enhanced open circuit voltage. Detail measurements and analysis show an enhanced built-in potential in the C-PSCs as well as suppression of the non-radiative recombination due to the ferroelectric PbTiO3 layer incorporation, accounting for the boosted VOC and photovoltaic performance.

Original languageEnglish
Article number1806506
JournalAdvanced Functional Materials
Volume29
Issue number1
DOIs
Publication statusPublished - 4 Jan 2019
Externally publishedYes

Keywords

  • PbTiO
  • carbon
  • ferroelectricity
  • hole transport material free
  • perovskite solar cells

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