Abstract
This letter presents an ultra-compact bi-directional <inline-formula> <tex-math notation="LaTeX">$Ka$</tex-math> </inline-formula>-band front-end module (FEM) in 65-nm CMOS technology. In this design, the receiver (RX) path is stacked into the transmitter (TX) path by using a magnetic self-canceling technique, improving area efficiency greatly with negligible performance penalty. Furthermore, a three-inductor coupled resonator is elaborately designed to realize the functions of the balun and input–output matching network (MN) of the RX/TX simultaneously. The measurement results demonstrate that the proposed FEM achieves 18.2-dB peak gain with a 3.8-dB minimum noise figure (NF) in RX mode, and 26-dB peak gain with 13.5-dBm 1-dB compression output power (OP<inline-formula> <tex-math notation="LaTeX">$_{1\,\text{dB}}$</tex-math> </inline-formula>) in TX mode. The core size of this proposed design is only 0.06 mm<inline-formula> <tex-math notation="LaTeX">$^2$</tex-math> </inline-formula> which is only 20<inline-formula> <tex-math notation="LaTeX">$\%$</tex-math> </inline-formula>–50<inline-formula> <tex-math notation="LaTeX">$\%$</tex-math> </inline-formula> of the size occupied in prior works.
| Original language | English |
|---|---|
| Pages (from-to) | 1-4 |
| Number of pages | 4 |
| Journal | IEEE Microwave and Wireless Components Letters |
| DOIs | |
| Publication status | Accepted/In press - 2022 |
| Externally published | Yes |
Keywords
- 5G mobile communication
- Bi-directional
- Bidirectional control
- CMOS
- Couplings
- Finite element analysis
- Manganese
- Transceivers
- Transformers
- front-end module (FEM)
- millimeter wave (mm-wave)
- transformer-based
- transmit/receive switch (TRSW)