Abstract
This letter presents an ultra-compact bi-directional Ka-band front-end module (FEM) in 65-nm CMOS technology. In this design, the receiver (RX) path is stacked into the transmitter (TX) path by using a magnetic self-canceling technique, improving area efficiency greatly with negligible performance penalty. Furthermore, a three-inductor coupled resonator is elaborately designed to realize the functions of the balun and input–output matching network (MN) of the RX/TX simultaneously. The measurement results demonstrate that the proposed FEM achieves 18.2-dB peak gain with a 3.8-dB minimum noise figure (NF) in RX mode, and 26-dB peak gain with 13.5-dBm 1-dB compression output power (OP1dB) in TX mode. The core size of this proposed design is only 0.06 mm2 which is only 20%–50% of the size occupied in prior works.
Original language | English |
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Pages (from-to) | 70-73 |
Number of pages | 4 |
Journal | IEEE Microwave and Wireless Technology Letters |
Volume | 33 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1 Jan 2023 |
Externally published | Yes |
Keywords
- Bi-directional
- CMOS
- front-end module (FEM)
- millimeter wave (mm-wave)
- transformer-based
- transmit/receive switch (TRSW)