An Improved GaN HEMT Model with Modified Capacitance Equation Based on EE_HEMT Model

Weitao Xue; Yiming Liu; Chujun Wang; Feng Qian

An Improved GaN HEMT Model with Modified Capacitance Equation Based on EE_HEMT Model

Weitao Xue^*
, Yiming Liu
, Chujun Wang
, Feng Qian

^*Corresponding author for this work

Nanjing Electronic Devices Institute

Research output: Contribution to journal › Article › peer-review

Abstract

This paper provided a new model for GaN HEMT using improved capacitance-equation based on the traditional EE_HEMT model, in which the tanh function was used to describe the variation tendency of the parameters and. The parameters for the new model were extracted using ICCAP. The S-parameters and load-pull simulations were conducted in ADS, and the simulated results were compared with the measured ones. The results show that the fitting accuracy for Pout is improved. The new model presented in this paper is supposed to increase the simulation accuracy of GaN HEMT model.

Original language	English
Pages (from-to)	303-306 and 322
Journal	Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics
Volume	37
Issue number	5
Publication status	Published - 25 Oct 2017
Externally published	Yes

Keywords

Capacitance equation
EE_HEMT model
GaN HEMT
Load-pull simulation

Cite this

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title = "An Improved GaN HEMT Model with Modified Capacitance Equation Based on EE\_HEMT Model",

abstract = "This paper provided a new model for GaN HEMT using improved capacitance-equation based on the traditional EE\_HEMT model, in which the tanh function was used to describe the variation tendency of the parameters and. The parameters for the new model were extracted using ICCAP. The S-parameters and load-pull simulations were conducted in ADS, and the simulated results were compared with the measured ones. The results show that the fitting accuracy for Pout is improved. The new model presented in this paper is supposed to increase the simulation accuracy of GaN HEMT model.",

keywords = "Capacitance equation, EE\_HEMT model, GaN HEMT, Load-pull simulation",

author = "Weitao Xue and Yiming Liu and Chujun Wang and Feng Qian",

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TY - JOUR

T1 - An Improved GaN HEMT Model with Modified Capacitance Equation Based on EE_HEMT Model

AU - Xue, Weitao

AU - Liu, Yiming

AU - Wang, Chujun

AU - Qian, Feng

PY - 2017/10/25

Y1 - 2017/10/25

N2 - This paper provided a new model for GaN HEMT using improved capacitance-equation based on the traditional EE_HEMT model, in which the tanh function was used to describe the variation tendency of the parameters and. The parameters for the new model were extracted using ICCAP. The S-parameters and load-pull simulations were conducted in ADS, and the simulated results were compared with the measured ones. The results show that the fitting accuracy for Pout is improved. The new model presented in this paper is supposed to increase the simulation accuracy of GaN HEMT model.

AB - This paper provided a new model for GaN HEMT using improved capacitance-equation based on the traditional EE_HEMT model, in which the tanh function was used to describe the variation tendency of the parameters and. The parameters for the new model were extracted using ICCAP. The S-parameters and load-pull simulations were conducted in ADS, and the simulated results were compared with the measured ones. The results show that the fitting accuracy for Pout is improved. The new model presented in this paper is supposed to increase the simulation accuracy of GaN HEMT model.

KW - Capacitance equation

KW - EE_HEMT model

KW - GaN HEMT

KW - Load-pull simulation

UR - https://www.scopus.com/pages/publications/85040904735

M3 - Article

AN - SCOPUS:85040904735

SN - 1000-3819

VL - 37

SP - 303-306 and 322

JO - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

JF - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

IS - 5

ER -

An Improved GaN HEMT Model with Modified Capacitance Equation Based on EE_HEMT Model

Abstract

Keywords

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