@inproceedings{88b9a34e80ca486d8aa4b6f297cb221b,
title = "Advanced simulation of rram memory cells",
abstract = "Resistive random-access memories (RRAMs) are overwhelmingly viewed as potential candidates for the next generation of non-volatile memory devices. Here, we discuss the advantages of the kinetic Monte Carlo (KMC) simulation framework for RRAMs. We use a robust KMC simulator to analyze transport in promising oxide structures. The simulator couples self-consistently charge transport and thermal effects in the three-dimensional (3D) space, allowing a realistic reconstruction of the conductive filaments responsible for switching. By presenting insightful results, we argue that using a 3D physical electro-thermal simulator is necessary for understanding RRAM operation and reliability.",
keywords = "Charge transport, Electron-ion interactions, Kinetic Monte Carlo (KMC), Multi-scale modelling, Resistive random-access memories (RRAMs), Self-heating",
author = "Toufik Sadi and Oves Badami and Vihar Georgiev and Jie Ding and Asen Asenov",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 13th IEEE International Conference on ASIC, ASICON 2019 ; Conference date: 29-10-2019 Through 01-11-2019",
year = "2019",
month = oct,
doi = "10.1109/ASICON47005.2019.8983467",
language = "English",
series = "Proceedings of International Conference on ASIC",
publisher = "IEEE Computer Society",
editor = "Fan Ye and Ting-Ao Tang",
booktitle = "Proceedings - 2019 IEEE 13th International Conference on ASIC, ASICON 2019",
address = "United States",
}