Active-matrix GaN micro light-emitting diode display with unprecedented brightness

Johannes Herrnsdorf; Jonathan J.D. McKendry; Shuailong Zhang; Enyuan Xie; Ricardo Ferreira; David Massoubre; Ahmad Mahmood Zuhdi; Robert K. Henderson; Ian Underwood; Scott Watson; Anthony E. Kelly; Erdan Gu; Martin D. Dawson

doi:10.1109/TED.2015.2416915

Active-matrix GaN micro light-emitting diode display with unprecedented brightness

Johannes Herrnsdorf
, Jonathan J.D. McKendry
, Shuailong Zhang
, Enyuan Xie
, Ricardo Ferreira
, David Massoubre
, Ahmad Mahmood Zuhdi
, Robert K. Henderson
, Ian Underwood
, Scott Watson
, Anthony E. Kelly
, Erdan Gu
, Martin D. Dawson

University of Strathclyde
University of Glasgow
Griffith University Queensland
University of Edinburgh

Research output: Contribution to journal › Article › peer-review

138 Citations (Scopus)

Abstract

Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 10⁶ cd/m².

Original language	English
Article number	7084141
Pages (from-to)	1918-1925
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	62
Issue number	6
DOIs	https://doi.org/10.1109/TED.2015.2416915
Publication status	Published - 1 Jun 2015
Externally published	Yes

Keywords

CMOS integrated circuits
Light-emitting diodes (LEDs)
displays
flip-chip devices
integrated optoelectronics

Access to Document

10.1109/TED.2015.2416915

Cite this

Herrnsdorf, J., McKendry, J. J. D., Zhang, S., Xie, E., Ferreira, R., Massoubre, D., Zuhdi, A. M., Henderson, R. K., Underwood, I., Watson, S., Kelly, A. E., Gu, E., & Dawson, M. D. (2015). Active-matrix GaN micro light-emitting diode display with unprecedented brightness. IEEE Transactions on Electron Devices, 62(6), 1918-1925. Article 7084141. https://doi.org/10.1109/TED.2015.2416915

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abstract = "Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 106 cd/m2.",

keywords = "CMOS integrated circuits, Light-emitting diodes (LEDs), displays, flip-chip devices, integrated optoelectronics",

author = "Johannes Herrnsdorf and McKendry, \{Jonathan J.D.\} and Shuailong Zhang and Enyuan Xie and Ricardo Ferreira and David Massoubre and Zuhdi, \{Ahmad Mahmood\} and Henderson, \{Robert K.\} and Ian Underwood and Scott Watson and Kelly, \{Anthony E.\} and Erdan Gu and Dawson, \{Martin D.\}",

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doi = "10.1109/TED.2015.2416915",

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AU - Herrnsdorf, Johannes

AU - McKendry, Jonathan J.D.

AU - Zhang, Shuailong

AU - Xie, Enyuan

AU - Ferreira, Ricardo

AU - Massoubre, David

AU - Zuhdi, Ahmad Mahmood

AU - Henderson, Robert K.

AU - Underwood, Ian

AU - Watson, Scott

AU - Kelly, Anthony E.

AU - Gu, Erdan

AU - Dawson, Martin D.

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N2 - Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 106 cd/m2.

AB - Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 106 cd/m2.

KW - CMOS integrated circuits

KW - Light-emitting diodes (LEDs)

KW - displays

KW - flip-chip devices

KW - integrated optoelectronics

UR - https://www.scopus.com/pages/publications/85027954264

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 6

M1 - 7084141

ER -

Active-matrix GaN micro light-emitting diode display with unprecedented brightness

Abstract

Keywords

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