Activation of p-GaN in a two-step rapid thermal annealing process

Zhinong Yu; Yanfei Gao; Jong Wook Seo

Activation of p-GaN in a two-step rapid thermal annealing process

Zhinong Yu^*, Yanfei Gao, Jong Wook Seo

^*Corresponding author for this work

School of Optics and Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A two-step rapid thermal annealing process was optimized to activate magnesium doped gallium nitride layer (P-GaN). The optimized process consists of a long-term step (4 min) at 600°C followed by a short-term step at 850°C for 1 min. A hole concentration of 1.40 × 10¹⁸ cm^-3and a resistivity as low as 0.16 Ω-cm were achieved for the activated sample. The specific contact resistance for Ni/Au-contacted p-GaN and the turn-on voltage of GaN-based LEDs was determined to be 1.0 × 10 ^-4 Ω · cm² and less than 3.2 V at 20 mA, which are improved results from those achieved by standard annealing process (750°C for 20 min).

Original language	English
Title of host publication	AD'07 - Proceedings of Asia Display 2007
Pages	1577-1581
Number of pages	5
Publication status	Published - 2007
Event	Asia Display 2007, AD'07 - Shanghai, China Duration: 12 Mar 2007 → 16 Mar 2007

Publication series

Name	AD'07 - Proceedings of Asia Display 2007
Volume	2

Conference

Conference	Asia Display 2007, AD'07
Country/Territory	China
City	Shanghai
Period	12/03/07 → 16/03/07

Keywords

Light-emitting diodes (LEDs)
P-GaN
Rapid thermal annealing

Cite this

@inproceedings{df2f0b8e37c740e88f1943c4d91426bc,

title = "Activation of p-GaN in a two-step rapid thermal annealing process",

abstract = "A two-step rapid thermal annealing process was optimized to activate magnesium doped gallium nitride layer (P-GaN). The optimized process consists of a long-term step (4 min) at 600°C followed by a short-term step at 850°C for 1 min. A hole concentration of 1.40 × 1018 cm-3and a resistivity as low as 0.16 Ω-cm were achieved for the activated sample. The specific contact resistance for Ni/Au-contacted p-GaN and the turn-on voltage of GaN-based LEDs was determined to be 1.0 × 10 -4 Ω · cm2 and less than 3.2 V at 20 mA, which are improved results from those achieved by standard annealing process (750°C for 20 min).",

keywords = "Light-emitting diodes (LEDs), P-GaN, Rapid thermal annealing",

author = "Zhinong Yu and Yanfei Gao and Seo, \{Jong Wook\}",

year = "2007",

language = "English",

isbn = "9787561752289",

series = "AD'07 - Proceedings of Asia Display 2007",

pages = "1577--1581",

booktitle = "AD'07 - Proceedings of Asia Display 2007",

note = "Asia Display 2007, AD'07 ; Conference date: 12-03-2007 Through 16-03-2007",

}

TY - GEN

T1 - Activation of p-GaN in a two-step rapid thermal annealing process

AU - Yu, Zhinong

AU - Gao, Yanfei

AU - Seo, Jong Wook

PY - 2007

Y1 - 2007

N2 - A two-step rapid thermal annealing process was optimized to activate magnesium doped gallium nitride layer (P-GaN). The optimized process consists of a long-term step (4 min) at 600°C followed by a short-term step at 850°C for 1 min. A hole concentration of 1.40 × 1018 cm-3and a resistivity as low as 0.16 Ω-cm were achieved for the activated sample. The specific contact resistance for Ni/Au-contacted p-GaN and the turn-on voltage of GaN-based LEDs was determined to be 1.0 × 10 -4 Ω · cm2 and less than 3.2 V at 20 mA, which are improved results from those achieved by standard annealing process (750°C for 20 min).

AB - A two-step rapid thermal annealing process was optimized to activate magnesium doped gallium nitride layer (P-GaN). The optimized process consists of a long-term step (4 min) at 600°C followed by a short-term step at 850°C for 1 min. A hole concentration of 1.40 × 1018 cm-3and a resistivity as low as 0.16 Ω-cm were achieved for the activated sample. The specific contact resistance for Ni/Au-contacted p-GaN and the turn-on voltage of GaN-based LEDs was determined to be 1.0 × 10 -4 Ω · cm2 and less than 3.2 V at 20 mA, which are improved results from those achieved by standard annealing process (750°C for 20 min).

KW - Light-emitting diodes (LEDs)

KW - P-GaN

KW - Rapid thermal annealing

UR - https://www.scopus.com/pages/publications/77958074681

M3 - Conference contribution

AN - SCOPUS:77958074681

SN - 9787561752289

T3 - AD'07 - Proceedings of Asia Display 2007

SP - 1577

EP - 1581

BT - AD'07 - Proceedings of Asia Display 2007

T2 - Asia Display 2007, AD'07

Y2 - 12 March 2007 through 16 March 2007

ER -

Activation of p-GaN in a two-step rapid thermal annealing process

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