Absorption Enhancement in a Quantum Dot Thz Detector with a Metal-Semiconductor-Metal Structure

Hongmei Liu; Ruolong Zhang; Tianhua Meng; Yongqiang Kang; Weidong Hu; Guozhong Zhao

doi:10.3390/coatings12070874

Absorption Enhancement in a Quantum Dot Thz Detector with a Metal-Semiconductor-Metal Structure

Hongmei Liu
, Ruolong Zhang
, Tianhua Meng^*
, Yongqiang Kang^*
, Weidong Hu
, Guozhong Zhao

^*Corresponding author for this work

School of Integrated Circuits and Electronics

Shanxi Datong University
Nankai University
East China Jiaotong University
Terahertz Technology (Datong) Institute
Capital Normal University

Research output: Contribution to journal › Article › peer-review

Abstract

The low absorptivity of quantum dot nano-structures cannot meet the requirements for high-performance next-generation Thz detectors which can be used for environmental pollution detection. In this study, a novel metal-semiconductor-metal (MSM) cavity structure with a square hole array instead of a traditional planar metal electrode was developed to improve and enhance the absorptivity of a quantum dot Thz detector. The possible modes and loss problems in the metal resonant cavity were analyzed using the finite-element transmission matrix, the eigenvector method, and Kirchhoff diffraction theory. The results demonstrate that the MSM cavity structure introduced in the detector can enhance absorption up to 8.666 times higher than that of the conventional counterpart.

Original language	English
Article number	874
Journal	Coatings
Volume	12
Issue number	7
DOIs	https://doi.org/10.3390/coatings12070874
Publication status	Published - Jul 2022

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 12 Responsible Consumption and Production

Keywords

absorption
metal semiconductor metal cavity structure
quantum dot photodetector

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Cite this

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title = "Absorption Enhancement in a Quantum Dot Thz Detector with a Metal-Semiconductor-Metal Structure",

abstract = "The low absorptivity of quantum dot nano-structures cannot meet the requirements for high-performance next-generation Thz detectors which can be used for environmental pollution detection. In this study, a novel metal-semiconductor-metal (MSM) cavity structure with a square hole array instead of a traditional planar metal electrode was developed to improve and enhance the absorptivity of a quantum dot Thz detector. The possible modes and loss problems in the metal resonant cavity were analyzed using the finite-element transmission matrix, the eigenvector method, and Kirchhoff diffraction theory. The results demonstrate that the MSM cavity structure introduced in the detector can enhance absorption up to 8.666 times higher than that of the conventional counterpart.",

keywords = "absorption, metal semiconductor metal cavity structure, quantum dot photodetector",

author = "Hongmei Liu and Ruolong Zhang and Tianhua Meng and Yongqiang Kang and Weidong Hu and Guozhong Zhao",

note = "Publisher Copyright: {\textcopyright} 2022 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2022",

month = jul,

doi = "10.3390/coatings12070874",

language = "English",

volume = "12",

journal = "Coatings",

issn = "2079-6412",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "7",

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TY - JOUR

T1 - Absorption Enhancement in a Quantum Dot Thz Detector with a Metal-Semiconductor-Metal Structure

AU - Liu, Hongmei

AU - Zhang, Ruolong

AU - Meng, Tianhua

AU - Kang, Yongqiang

AU - Hu, Weidong

AU - Zhao, Guozhong

PY - 2022/7

Y1 - 2022/7

N2 - The low absorptivity of quantum dot nano-structures cannot meet the requirements for high-performance next-generation Thz detectors which can be used for environmental pollution detection. In this study, a novel metal-semiconductor-metal (MSM) cavity structure with a square hole array instead of a traditional planar metal electrode was developed to improve and enhance the absorptivity of a quantum dot Thz detector. The possible modes and loss problems in the metal resonant cavity were analyzed using the finite-element transmission matrix, the eigenvector method, and Kirchhoff diffraction theory. The results demonstrate that the MSM cavity structure introduced in the detector can enhance absorption up to 8.666 times higher than that of the conventional counterpart.

AB - The low absorptivity of quantum dot nano-structures cannot meet the requirements for high-performance next-generation Thz detectors which can be used for environmental pollution detection. In this study, a novel metal-semiconductor-metal (MSM) cavity structure with a square hole array instead of a traditional planar metal electrode was developed to improve and enhance the absorptivity of a quantum dot Thz detector. The possible modes and loss problems in the metal resonant cavity were analyzed using the finite-element transmission matrix, the eigenvector method, and Kirchhoff diffraction theory. The results demonstrate that the MSM cavity structure introduced in the detector can enhance absorption up to 8.666 times higher than that of the conventional counterpart.

KW - absorption

KW - metal semiconductor metal cavity structure

KW - quantum dot photodetector

UR - https://www.scopus.com/pages/publications/85132933927

U2 - 10.3390/coatings12070874

DO - 10.3390/coatings12070874

M3 - Article

AN - SCOPUS:85132933927

SN - 2079-6412

VL - 12

JO - Coatings

JF - Coatings

IS - 7

M1 - 874

ER -

Absorption Enhancement in a Quantum Dot Thz Detector with a Metal-Semiconductor-Metal Structure

Abstract

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Keywords

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