A wideband integrated marchand balun in silicon technology for millimeter-wave applications

Yi Zhong; Yang Yang

doi:10.1109/ICEAA.2016.7731551

A wideband integrated marchand balun in silicon technology for millimeter-wave applications

Yi Zhong
, Yang Yang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Citations (Scopus)

Abstract

This paper presents an Integrated on-chip balun design for millimeter-wave applications. The balun is designed and fabricated in a standard silicon-germanium technology. The designed balun is based on a coupled-line structure, which consists of two edge-coupled meander lines along with a solid ground plane. The simulation shows that the proposed balun covers the bandwidth from 30 GHz to above 100 GHz. Within this frequency range, the magnitude error and phase error are 0.3 dB and 4°, respectively. The insertion loss of the balun is better than 5 dB at the center of the band. The size of the balun is only 500 μm × 400 μm, excluding the pads.

Original language	English
Title of host publication	Proceedings of the 2016 18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	913-915
Number of pages	3
ISBN (Electronic)	9781467398114
DOIs	https://doi.org/10.1109/ICEAA.2016.7731551
Publication status	Published - 2 Nov 2016
Externally published	Yes
Event	18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016 - Cairns, Australia Duration: 19 Sept 2016 → 23 Sept 2016

Publication series

Name	Proceedings of the 2016 18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016

Conference

Conference	18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016
Country/Territory	Australia
City	Cairns
Period	19/09/16 → 23/09/16

Access to Document

10.1109/ICEAA.2016.7731551

Cite this

Zhong, Y., & Yang, Y. (2016). A wideband integrated marchand balun in silicon technology for millimeter-wave applications. In Proceedings of the 2016 18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016 (pp. 913-915). Article 7731551 (Proceedings of the 2016 18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICEAA.2016.7731551

Zhong, Yi ; Yang, Yang. / A wideband integrated marchand balun in silicon technology for millimeter-wave applications. Proceedings of the 2016 18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 913-915 (Proceedings of the 2016 18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016).

@inproceedings{8eb98252a84740e19a9804a349a12226,

title = "A wideband integrated marchand balun in silicon technology for millimeter-wave applications",

abstract = "This paper presents an Integrated on-chip balun design for millimeter-wave applications. The balun is designed and fabricated in a standard silicon-germanium technology. The designed balun is based on a coupled-line structure, which consists of two edge-coupled meander lines along with a solid ground plane. The simulation shows that the proposed balun covers the bandwidth from 30 GHz to above 100 GHz. Within this frequency range, the magnitude error and phase error are 0.3 dB and 4°, respectively. The insertion loss of the balun is better than 5 dB at the center of the band. The size of the balun is only 500 μm × 400 μm, excluding the pads.",

author = "Yi Zhong and Yang Yang",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016 ; Conference date: 19-09-2016 Through 23-09-2016",

year = "2016",

month = nov,

day = "2",

doi = "10.1109/ICEAA.2016.7731551",

language = "English",

series = "Proceedings of the 2016 18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "913--915",

booktitle = "Proceedings of the 2016 18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016",

address = "United States",

}

Zhong, Y & Yang, Y 2016, A wideband integrated marchand balun in silicon technology for millimeter-wave applications. in Proceedings of the 2016 18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016., 7731551, Proceedings of the 2016 18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016, Institute of Electrical and Electronics Engineers Inc., pp. 913-915, 18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016, Cairns, Australia, 19/09/16. https://doi.org/10.1109/ICEAA.2016.7731551

A wideband integrated marchand balun in silicon technology for millimeter-wave applications. / Zhong, Yi; Yang, Yang.
Proceedings of the 2016 18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 913-915 7731551 (Proceedings of the 2016 18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - A wideband integrated marchand balun in silicon technology for millimeter-wave applications

AU - Zhong, Yi

AU - Yang, Yang

PY - 2016/11/2

Y1 - 2016/11/2

N2 - This paper presents an Integrated on-chip balun design for millimeter-wave applications. The balun is designed and fabricated in a standard silicon-germanium technology. The designed balun is based on a coupled-line structure, which consists of two edge-coupled meander lines along with a solid ground plane. The simulation shows that the proposed balun covers the bandwidth from 30 GHz to above 100 GHz. Within this frequency range, the magnitude error and phase error are 0.3 dB and 4°, respectively. The insertion loss of the balun is better than 5 dB at the center of the band. The size of the balun is only 500 μm × 400 μm, excluding the pads.

AB - This paper presents an Integrated on-chip balun design for millimeter-wave applications. The balun is designed and fabricated in a standard silicon-germanium technology. The designed balun is based on a coupled-line structure, which consists of two edge-coupled meander lines along with a solid ground plane. The simulation shows that the proposed balun covers the bandwidth from 30 GHz to above 100 GHz. Within this frequency range, the magnitude error and phase error are 0.3 dB and 4°, respectively. The insertion loss of the balun is better than 5 dB at the center of the band. The size of the balun is only 500 μm × 400 μm, excluding the pads.

UR - https://www.scopus.com/pages/publications/85007410351

U2 - 10.1109/ICEAA.2016.7731551

DO - 10.1109/ICEAA.2016.7731551

M3 - Conference contribution

AN - SCOPUS:85007410351

T3 - Proceedings of the 2016 18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016

SP - 913

EP - 915

BT - Proceedings of the 2016 18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016

PB - Institute of Electrical and Electronics Engineers Inc.

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Y2 - 19 September 2016 through 23 September 2016

ER -

Zhong Y, Yang Y. A wideband integrated marchand balun in silicon technology for millimeter-wave applications. In Proceedings of the 2016 18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 913-915. 7731551. (Proceedings of the 2016 18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016). doi: 10.1109/ICEAA.2016.7731551

A wideband integrated marchand balun in silicon technology for millimeter-wave applications

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