A W-band MMIC Resistive Mixer Based on Epitaxial Graphene FET

Omid Habibpour; Zhongxia Simon He; Wlodek Strupinski; Niklas Rorsman; Tymoteusz Ciuk; Pawel Ciepielewski; Herbert Zirath

doi:10.1109/LMWC.2016.2646998

A W-band MMIC Resistive Mixer Based on Epitaxial Graphene FET

Omid Habibpour
, Zhongxia Simon He
, Wlodek Strupinski
, Niklas Rorsman
, Tymoteusz Ciuk
, Pawel Ciepielewski
, Herbert Zirath

Chalmers University of Technology
Institute of Microelectronics and Photonics

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

This letter presents the design, fabrication and characterization of the first graphene based monolithic microwave integrated circuit (MMIC) in microstrip technology operating in W-band. The circuit is a resistive mixer in a 250 nm graphene field effect transistor (G-FET) technology on a SiC substrate. A conversion loss of 18 dB is achieved which is limited by the available local oscillator (LO) power. The mixer exhibits a flat response over radio frequency (RF) range of 90-100 GHz. The RF bandwidth is also limited by the measurement setup.

Original language	English
Article number	7836348
Pages (from-to)	168-170
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	27
Issue number	2
DOIs	https://doi.org/10.1109/LMWC.2016.2646998
Publication status	Published - Feb 2017
Externally published	Yes

Keywords

Epitaxial graphene
graphene FET
MMIC
resistive mixer
W-band

Access to Document

10.1109/LMWC.2016.2646998

Cite this

@article{8e1eae20f80549bda6cfcc6c77f6069d,

title = "A W-band MMIC Resistive Mixer Based on Epitaxial Graphene FET",

abstract = "This letter presents the design, fabrication and characterization of the first graphene based monolithic microwave integrated circuit (MMIC) in microstrip technology operating in W-band. The circuit is a resistive mixer in a 250 nm graphene field effect transistor (G-FET) technology on a SiC substrate. A conversion loss of 18 dB is achieved which is limited by the available local oscillator (LO) power. The mixer exhibits a flat response over radio frequency (RF) range of 90-100 GHz. The RF bandwidth is also limited by the measurement setup.",

keywords = "Epitaxial graphene, graphene FET, MMIC, resistive mixer, W-band",

author = "Omid Habibpour and He, \{Zhongxia Simon\} and Wlodek Strupinski and Niklas Rorsman and Tymoteusz Ciuk and Pawel Ciepielewski and Herbert Zirath",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.",

year = "2017",

month = feb,

doi = "10.1109/LMWC.2016.2646998",

language = "English",

volume = "27",

pages = "168--170",

journal = "IEEE Microwave and Wireless Components Letters",

issn = "1531-1309",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - A W-band MMIC Resistive Mixer Based on Epitaxial Graphene FET

AU - Habibpour, Omid

AU - He, Zhongxia Simon

AU - Strupinski, Wlodek

AU - Rorsman, Niklas

AU - Ciuk, Tymoteusz

AU - Ciepielewski, Pawel

AU - Zirath, Herbert

PY - 2017/2

Y1 - 2017/2

N2 - This letter presents the design, fabrication and characterization of the first graphene based monolithic microwave integrated circuit (MMIC) in microstrip technology operating in W-band. The circuit is a resistive mixer in a 250 nm graphene field effect transistor (G-FET) technology on a SiC substrate. A conversion loss of 18 dB is achieved which is limited by the available local oscillator (LO) power. The mixer exhibits a flat response over radio frequency (RF) range of 90-100 GHz. The RF bandwidth is also limited by the measurement setup.

AB - This letter presents the design, fabrication and characterization of the first graphene based monolithic microwave integrated circuit (MMIC) in microstrip technology operating in W-band. The circuit is a resistive mixer in a 250 nm graphene field effect transistor (G-FET) technology on a SiC substrate. A conversion loss of 18 dB is achieved which is limited by the available local oscillator (LO) power. The mixer exhibits a flat response over radio frequency (RF) range of 90-100 GHz. The RF bandwidth is also limited by the measurement setup.

KW - Epitaxial graphene

KW - graphene FET

KW - MMIC

KW - resistive mixer

KW - W-band

UR - https://www.scopus.com/pages/publications/85011700315

U2 - 10.1109/LMWC.2016.2646998

DO - 10.1109/LMWC.2016.2646998

M3 - Article

AN - SCOPUS:85011700315

SN - 1531-1309

VL - 27

SP - 168

EP - 170

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 2

M1 - 7836348

ER -

A W-band MMIC Resistive Mixer Based on Epitaxial Graphene FET

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this