TY - GEN
T1 - A Sub-6GHz Balun-LNA Using Dual Feedback Gm-Boosting and Triple Path Noise Canceling Technique
AU - Liu, Xuzhi
AU - Chen, Zhiming
AU - Xu, Zhe
AU - Zhao, Lianyi
AU - Li, Xiaoran
AU - Wang, Xinghua
AU - Liu, Zicheng
N1 - Publisher Copyright:
© 2026 IEEE.
PY - 2026
Y1 - 2026
N2 - A three-stage wideband low-noise amplifier (LNA) is proposed for sub-6GHz applications. This work implements a dual-feedback mechanism, with one path improving the gain and input matching through gm-boosting of the input device, while the other leverages a triode-region PMOS to suppress the second- and third-order nonlinearities. A triple-path noise-canceling is proposed to suppress the channel thermal noise across all main amplifiers. In addition, the balun-LNA provides differential outputs with calibrated amplitude and phase errors. Fabricated in a 55-nm CMOS process, the LNA achieves a simulated gain of 21.7 dB and a 3-dB bandwidth (BW3dB) of 0.83-3.16 GHz. The minimum noise figure (NF) is 1.06 dB, and the output third-order intercept point (OIP3) reaches +11.1 dBm at 1.5 GHz. The circuit consumes 6.6 mW from a 1.2-V supply, and occupies an area of 0.55 × 0.47 mm2 including RF pads.
AB - A three-stage wideband low-noise amplifier (LNA) is proposed for sub-6GHz applications. This work implements a dual-feedback mechanism, with one path improving the gain and input matching through gm-boosting of the input device, while the other leverages a triode-region PMOS to suppress the second- and third-order nonlinearities. A triple-path noise-canceling is proposed to suppress the channel thermal noise across all main amplifiers. In addition, the balun-LNA provides differential outputs with calibrated amplitude and phase errors. Fabricated in a 55-nm CMOS process, the LNA achieves a simulated gain of 21.7 dB and a 3-dB bandwidth (BW3dB) of 0.83-3.16 GHz. The minimum noise figure (NF) is 1.06 dB, and the output third-order intercept point (OIP3) reaches +11.1 dBm at 1.5 GHz. The circuit consumes 6.6 mW from a 1.2-V supply, and occupies an area of 0.55 × 0.47 mm2 including RF pads.
KW - CMOS
KW - gm-boosting
KW - Internet of Things (IoT)
KW - linearity
KW - low-noise amplifier (LNA)
KW - noise-canceling (NC)
UR - https://www.scopus.com/pages/publications/105043442059
U2 - 10.1109/ISCAS66217.2026.11562743
DO - 10.1109/ISCAS66217.2026.11562743
M3 - Conference contribution
AN - SCOPUS:105043442059
T3 - Proceedings - IEEE International Symposium on Circuits and Systems
SP - 2614
EP - 2618
BT - ISCAS 2026 - 2026 IEEE International Symposium on Circuits and Systems
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2026 IEEE International Symposium on Circuits and Systems, ISCAS 2026
Y2 - 24 May 2026 through 27 May 2026
ER -