A Simulation Comparison of Channel-All-Around and Gate-All-Around 3D Vertical Structure FeFET with IGZO Channel

Xuebin Wang, Zhijian Guo, Yutao Li, Chengji Jin, Jixuan Wu, Guanhua Yang, Yuanxiao Ma, Masaharu Kobayashi, Fei Mo*, Yeliang Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We have compared the memory performance of vertical structure InGaZnO (IGZO) channel ferroelectric field effect transistors (FETs) with channel-all-around and gate-all-around structures by 3D TCAD simulation for high-density application. The memory window (MW), on current (Ion), and subthreshold swing (SS) are systematically studied and discussed in terms of ferroelectric film thickness, channel thickness, and diameter. It reveals that the channel-all-around structure has a larger MW and higher Ion due to the overlap region between the gate and drain/source based on this simulation, while the memory performance of the gate-all-around structure can be improved through shrinking the length of the underlap region.

Original languageEnglish
Title of host publication2024 IEEE 17th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024
EditorsFan Ye, Xiaona Zhu, Ting Ao Tang
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350361834
DOIs
Publication statusPublished - 2024
Event17th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024 - Zhuhai, China
Duration: 22 Oct 202425 Oct 2024

Publication series

Name2024 IEEE 17th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024

Conference

Conference17th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024
Country/TerritoryChina
CityZhuhai
Period22/10/2425/10/24

Keywords

  • channel-all-around
  • ferroelectric field effect transistor (FeFET)
  • gate-all-around
  • In-Ga-Zn-O (IGZO) channel
  • TCAD simulation
  • vertical structure

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