TY - JOUR
T1 - A review on monolithic 3D integration
T2 - From bulk semiconductors to low-dimensional materials
AU - Hu, Ziying
AU - Li, Hongtao
AU - Zhang, Mingdi
AU - Jin, Zeming
AU - Li, Jixiang
AU - Fu, Wenku
AU - Dai, Yunyun
AU - Huang, Yuan
AU - Liu, Xia
AU - Wang, Yeliang
N1 - Publisher Copyright:
© The Author(s) 2025. Published by Tsinghua University Press.
PY - 2025/3
Y1 - 2025/3
N2 - Monolithic three-dimensional (M3D) integration represents a transformative approach in semiconductor technology, enabling the vertical integration of diverse functionalities within a single chip. This review explores the evolution of M3D integration from traditional bulk semiconductors to low-dimensional materials like two-dimensioanl (2D) transition metal dichalcogenides (TMDCs) and carbon nanotubes (CNTs). Key applications include logic circuits, static random access memory (SRAM), resistive random access memory (RRAM), sensors, optoelectronics, and artificial intelligence (AI) processing. M3D integration enhances device performance by reducing footprint, improving power efficiency, and alleviating the von Neumann bottleneck. The integration of 2D materials in M3D structures demonstrates significant advancements in terms of scalability, energy efficiency, and functional diversity. Challenges in manufacturing and scaling are discussed, along with prospects for future research directions. Overall, the M3D integration with low-dimensional materials presents a promising pathway for the development of next-generation electronic devices and systems.
AB - Monolithic three-dimensional (M3D) integration represents a transformative approach in semiconductor technology, enabling the vertical integration of diverse functionalities within a single chip. This review explores the evolution of M3D integration from traditional bulk semiconductors to low-dimensional materials like two-dimensioanl (2D) transition metal dichalcogenides (TMDCs) and carbon nanotubes (CNTs). Key applications include logic circuits, static random access memory (SRAM), resistive random access memory (RRAM), sensors, optoelectronics, and artificial intelligence (AI) processing. M3D integration enhances device performance by reducing footprint, improving power efficiency, and alleviating the von Neumann bottleneck. The integration of 2D materials in M3D structures demonstrates significant advancements in terms of scalability, energy efficiency, and functional diversity. Challenges in manufacturing and scaling are discussed, along with prospects for future research directions. Overall, the M3D integration with low-dimensional materials presents a promising pathway for the development of next-generation electronic devices and systems.
KW - artificial intelligence
KW - logic circuit
KW - monolithic three-dimensional (M3D) integration
KW - optoelectronics
KW - resistive random access memory (RRAM)
KW - sensor
KW - static random access memory (SRAM)
KW - two-dimensional (2D) material
UR - http://www.scopus.com/inward/record.url?scp=105000759390&partnerID=8YFLogxK
U2 - 10.26599/NR.2025.94907225
DO - 10.26599/NR.2025.94907225
M3 - Review article
AN - SCOPUS:105000759390
SN - 1998-0124
VL - 18
JO - Nano Research
JF - Nano Research
IS - 3
M1 - 94907225
ER -
