@inproceedings{bcf27a159992459da26d29ecbf2e95b2,
title = "A Novel Power Device: 4H-SiC Junction Gate Bipolar Transistor (JGBT) With Excellent Static Performance",
abstract = "Due to the existence of defects in gate oxide layer of 4H-SiC MOSFET, the further improvement of the breakdown voltage and reduction of on-resistance is difficult. The 4H-SiC JFET relies on the PN junction to pinch off the channel to bear the high electric field so that it is difficult to achieve high Baliga's figure of merit (BFOM). In this paper, a novel 4H-SiC power switching device called junction gate bipolar transistor (JGBT) is proposed, which does not require gate oxide layer and effectively reduces on-resistance while achieving high breakdown voltage. The TCAD simulation analysis and optimization show that the 4HSiC JGBT has an excellent breakdown voltage (BV) of 1443 V and ultra-low specific on-resistance (Ron,sp) of 0.94 mΩcm2. The BFOM reaches an astonishing 2215 MW/cm2, which increased by at least 23\% when comparing with other devices in the literatures.",
keywords = "4H-SiC, Baliga's figure of merit, JGBT, breakdown voltage, specific onresistance",
author = "Yongliang Ni and Deshang Sha and Keling Song",
note = "Publisher Copyright: {\textcopyright} 2026 IEEE.; 9th International Conference on Advanced Electronic Technology, Computers and Software Engineering, AETCSE 2026 ; Conference date: 20-03-2026 Through 22-03-2026",
year = "2026",
doi = "10.1109/AETCSE69203.2026.11504349",
language = "English",
series = "2026 9th International Conference on Advanced Electronic Technology, Computers and Software Engineering, AETCSE 2026",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "163--166",
booktitle = "2026 9th International Conference on Advanced Electronic Technology, Computers and Software Engineering, AETCSE 2026",
address = "United States",
}