A Novel Liner Formation Strategy for Double-sided Through-silicon-via (TSV) Process

Yigang Hao; Yingtao Ding; Baoyan Yang; Xingling Pan; Zhiming Chen; Ziyue Zhang

doi:10.1109/ICEPT59018.2023.10492443

A Novel Liner Formation Strategy for Double-sided Through-silicon-via (TSV) Process

Yigang Hao, Yingtao Ding, Baoyan Yang, Xingling Pan, Zhiming Chen, Ziyue Zhang^*

^*Corresponding author for this work

School of Integrated Circuits and Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, a novel polyimide (PI) liner formation strategy is proposed for double-sided through-silicon-via (TSV) process. Combined with the front-side PI deposition by the vacuum-assisted spin-coating technique, the back-side thinning and chemical mechanical polishing (CMP), and the back-side PI deposition through an optimized spin-coating process, continuous PI layer is successfully formed on both sides of the substrate surface as well as the sidewall of TSVs with diameter of 40 μm and height of 210 μm. Besides, the impacts of the key spin-coating parameters such as PI viscosity and spinning speed are investigated to optimize the formation of the back-side PI insulation layer. The proposed liner formation strategy enables the double-sided TSV process with PI liner, which features low complexity and high reliability.

Original language	English
Title of host publication	2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350338812
DOIs	https://doi.org/10.1109/ICEPT59018.2023.10492443
Publication status	Published - 2023
Event	24th International Conference on Electronic Packaging Technology, ICEPT 2023 - Shihezi City, China Duration: 8 Aug 2023 → 11 Aug 2023

Publication series

Name	2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023

Conference

Conference	24th International Conference on Electronic Packaging Technology, ICEPT 2023
Country/Territory	China
City	Shihezi City
Period	8/08/23 → 11/08/23

Keywords

Through-silicon-via (TSV)
chemical mechanical polishing (CMP)
double-sided process
polyimide (PI) liner
spin-coating technique

Access to Document

10.1109/ICEPT59018.2023.10492443

Cite this

Hao, Y., Ding, Y., Yang, B., Pan, X., Chen, Z., & Zhang, Z. (2023). A Novel Liner Formation Strategy for Double-sided Through-silicon-via (TSV) Process. In 2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023 (2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICEPT59018.2023.10492443

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title = "A Novel Liner Formation Strategy for Double-sided Through-silicon-via (TSV) Process",

abstract = "In this paper, a novel polyimide (PI) liner formation strategy is proposed for double-sided through-silicon-via (TSV) process. Combined with the front-side PI deposition by the vacuum-assisted spin-coating technique, the back-side thinning and chemical mechanical polishing (CMP), and the back-side PI deposition through an optimized spin-coating process, continuous PI layer is successfully formed on both sides of the substrate surface as well as the sidewall of TSVs with diameter of 40 μm and height of 210 μm. Besides, the impacts of the key spin-coating parameters such as PI viscosity and spinning speed are investigated to optimize the formation of the back-side PI insulation layer. The proposed liner formation strategy enables the double-sided TSV process with PI liner, which features low complexity and high reliability.",

keywords = "Through-silicon-via (TSV), chemical mechanical polishing (CMP), double-sided process, polyimide (PI) liner, spin-coating technique",

author = "Yigang Hao and Yingtao Ding and Baoyan Yang and Xingling Pan and Zhiming Chen and Ziyue Zhang",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 24th International Conference on Electronic Packaging Technology, ICEPT 2023 ; Conference date: 08-08-2023 Through 11-08-2023",

year = "2023",

doi = "10.1109/ICEPT59018.2023.10492443",

language = "English",

series = "2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023",

address = "United States",

}

Hao, Y, Ding, Y, Yang, B, Pan, X, Chen, Z & Zhang, Z 2023, A Novel Liner Formation Strategy for Double-sided Through-silicon-via (TSV) Process. in 2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023. 2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023, Institute of Electrical and Electronics Engineers Inc., 24th International Conference on Electronic Packaging Technology, ICEPT 2023, Shihezi City, China, 8/08/23. https://doi.org/10.1109/ICEPT59018.2023.10492443

A Novel Liner Formation Strategy for Double-sided Through-silicon-via (TSV) Process. / Hao, Yigang; Ding, Yingtao; Yang, Baoyan et al.
2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A Novel Liner Formation Strategy for Double-sided Through-silicon-via (TSV) Process

AU - Hao, Yigang

AU - Ding, Yingtao

AU - Yang, Baoyan

AU - Pan, Xingling

AU - Chen, Zhiming

AU - Zhang, Ziyue

PY - 2023

Y1 - 2023

N2 - In this paper, a novel polyimide (PI) liner formation strategy is proposed for double-sided through-silicon-via (TSV) process. Combined with the front-side PI deposition by the vacuum-assisted spin-coating technique, the back-side thinning and chemical mechanical polishing (CMP), and the back-side PI deposition through an optimized spin-coating process, continuous PI layer is successfully formed on both sides of the substrate surface as well as the sidewall of TSVs with diameter of 40 μm and height of 210 μm. Besides, the impacts of the key spin-coating parameters such as PI viscosity and spinning speed are investigated to optimize the formation of the back-side PI insulation layer. The proposed liner formation strategy enables the double-sided TSV process with PI liner, which features low complexity and high reliability.

AB - In this paper, a novel polyimide (PI) liner formation strategy is proposed for double-sided through-silicon-via (TSV) process. Combined with the front-side PI deposition by the vacuum-assisted spin-coating technique, the back-side thinning and chemical mechanical polishing (CMP), and the back-side PI deposition through an optimized spin-coating process, continuous PI layer is successfully formed on both sides of the substrate surface as well as the sidewall of TSVs with diameter of 40 μm and height of 210 μm. Besides, the impacts of the key spin-coating parameters such as PI viscosity and spinning speed are investigated to optimize the formation of the back-side PI insulation layer. The proposed liner formation strategy enables the double-sided TSV process with PI liner, which features low complexity and high reliability.

KW - Through-silicon-via (TSV)

KW - chemical mechanical polishing (CMP)

KW - double-sided process

KW - polyimide (PI) liner

KW - spin-coating technique

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U2 - 10.1109/ICEPT59018.2023.10492443

DO - 10.1109/ICEPT59018.2023.10492443

M3 - Conference contribution

AN - SCOPUS:85191719115

T3 - 2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023

BT - 2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 24th International Conference on Electronic Packaging Technology, ICEPT 2023

Y2 - 8 August 2023 through 11 August 2023

ER -

Hao Y, Ding Y, Yang B, Pan X, Chen Z, Zhang Z. A Novel Liner Formation Strategy for Double-sided Through-silicon-via (TSV) Process. In 2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023). doi: 10.1109/ICEPT59018.2023.10492443

A Novel Liner Formation Strategy for Double-sided Through-silicon-via (TSV) Process

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