A new n-type polymer based on: N, N ′-dialkoxynaphthalenediimide (NDIO) for organic thin-film transistors and all-polymer solar cells

Yinghui He; Xu Li; Haitao Liu; Han Meng; Guan Ying Wang; Bo Cui; Jinliang Wang; Yuning Li

doi:10.1039/c7tc05145j

A new n-type polymer based on: N, N ′-dialkoxynaphthalenediimide (NDIO) for organic thin-film transistors and all-polymer solar cells

Yinghui He, Xu Li, Haitao Liu, Han Meng, Guan Ying Wang, Bo Cui, Jinliang Wang^*, Yuning Li

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

The electron acceptor building block N,N′-dialkoxynaphthalenediimide (NDIO) has been, for the first time, used to develop an n-type polymer semiconductor, P(NDIO2OD-T). The polymer exhibits unipolar electron charge transport with an electron mobility of up to 5.4 × 10^-3 cm² V^-1 s^-1 in organic thin-film transistors (OTFTs) and shows good air-stability. When it is used as the acceptor in all-polymer solar cells (all-PSCs), a PCE of up to 3.25% is achieved. The performances of the OTFTs and all-PSCs based on this polymer have improved compared to its N,N′-dialkyl-substituted analogue.

Original language	English
Pages (from-to)	1349-1352
Number of pages	4
Journal	Journal of Materials Chemistry C
Volume	6
Issue number	6
DOIs	https://doi.org/10.1039/c7tc05145j
Publication status	Published - 2018
Externally published	Yes

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title = "A new n-type polymer based on: N, N ′-dialkoxynaphthalenediimide (NDIO) for organic thin-film transistors and all-polymer solar cells",

abstract = "The electron acceptor building block N,N′-dialkoxynaphthalenediimide (NDIO) has been, for the first time, used to develop an n-type polymer semiconductor, P(NDIO2OD-T). The polymer exhibits unipolar electron charge transport with an electron mobility of up to 5.4 × 10-3 cm2 V-1 s-1 in organic thin-film transistors (OTFTs) and shows good air-stability. When it is used as the acceptor in all-polymer solar cells (all-PSCs), a PCE of up to 3.25% is achieved. The performances of the OTFTs and all-PSCs based on this polymer have improved compared to its N,N′-dialkyl-substituted analogue.",

author = "Yinghui He and Xu Li and Haitao Liu and Han Meng and Wang, {Guan Ying} and Bo Cui and Jinliang Wang and Yuning Li",

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AU - He, Yinghui

AU - Li, Xu

AU - Liu, Haitao

AU - Meng, Han

AU - Wang, Guan Ying

AU - Cui, Bo

AU - Wang, Jinliang

AU - Li, Yuning

PY - 2018

Y1 - 2018

N2 - The electron acceptor building block N,N′-dialkoxynaphthalenediimide (NDIO) has been, for the first time, used to develop an n-type polymer semiconductor, P(NDIO2OD-T). The polymer exhibits unipolar electron charge transport with an electron mobility of up to 5.4 × 10-3 cm2 V-1 s-1 in organic thin-film transistors (OTFTs) and shows good air-stability. When it is used as the acceptor in all-polymer solar cells (all-PSCs), a PCE of up to 3.25% is achieved. The performances of the OTFTs and all-PSCs based on this polymer have improved compared to its N,N′-dialkyl-substituted analogue.

AB - The electron acceptor building block N,N′-dialkoxynaphthalenediimide (NDIO) has been, for the first time, used to develop an n-type polymer semiconductor, P(NDIO2OD-T). The polymer exhibits unipolar electron charge transport with an electron mobility of up to 5.4 × 10-3 cm2 V-1 s-1 in organic thin-film transistors (OTFTs) and shows good air-stability. When it is used as the acceptor in all-polymer solar cells (all-PSCs), a PCE of up to 3.25% is achieved. The performances of the OTFTs and all-PSCs based on this polymer have improved compared to its N,N′-dialkyl-substituted analogue.

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A new n-type polymer based on: N, N ′-dialkoxynaphthalenediimide (NDIO) for organic thin-film transistors and all-polymer solar cells

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