A monolithic inertial measurement unit fabricated with improved DRIE post-CMOS process

Hongzhi Sun; Kemiao Jia; Yingtao Ding; Zhongyang Guo; Xuesong Liu; Guizhen Yan; Huikai Xie

doi:10.1109/ICSENS.2010.5690638

A monolithic inertial measurement unit fabricated with improved DRIE post-CMOS process

Hongzhi Sun^*, Kemiao Jia, Yingtao Ding, Zhongyang Guo, Xuesong Liu, Guizhen Yan, Huikai Xie

^*Corresponding author for this work

School of Integrated Circuits and Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Citations (Scopus)

Abstract

This paper reports a monolithic CMOS-MEMS inertial measurement unit (IMU), which is composed of a 3-axis accelerometer, a Z-axis and a lateral-axis gyroscope. The IMU is integrated with interface circuits on a 5×5mm ² foundry CMOS chip and fabricated with an improved DRIE post-CMOS bulk micromachining process. The new process incorporates a metal deposition to provide a thermal path for isolated structures during DRIE etching. The X/Y-axis accelerometer achieves a sensitivity of 191mV/g with a noise floor of 35μg/√Hz, and those parameters of the Z-axis are 124mV/g and 56μg/√Hz, respectively. The Z-axis gyroscope has a sensitivity of 0.3mV/°/s and a noise floor of 0.2°/s/√Hz. The characterization of X/Y-axis gyroscope is ongoing.

Original language	English
Title of host publication	IEEE Sensors 2010 Conference, SENSORS 2010
Pages	1198-1202
Number of pages	5
DOIs	https://doi.org/10.1109/ICSENS.2010.5690638
Publication status	Published - 2010
Event	9th IEEE Sensors Conference 2010, SENSORS 2010 - Waikoloa, HI, United States Duration: 1 Nov 2010 → 4 Nov 2010

Publication series

Name	Proceedings of IEEE Sensors

Conference

Conference	9th IEEE Sensors Conference 2010, SENSORS 2010
Country/Territory	United States
City	Waikoloa, HI
Period	1/11/10 → 4/11/10

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10.1109/ICSENS.2010.5690638

Cite this

@inproceedings{701867c26e71428499ce4f0fab972314,

title = "A monolithic inertial measurement unit fabricated with improved DRIE post-CMOS process",

abstract = "This paper reports a monolithic CMOS-MEMS inertial measurement unit (IMU), which is composed of a 3-axis accelerometer, a Z-axis and a lateral-axis gyroscope. The IMU is integrated with interface circuits on a 5×5mm 2 foundry CMOS chip and fabricated with an improved DRIE post-CMOS bulk micromachining process. The new process incorporates a metal deposition to provide a thermal path for isolated structures during DRIE etching. The X/Y-axis accelerometer achieves a sensitivity of 191mV/g with a noise floor of 35μg/√Hz, and those parameters of the Z-axis are 124mV/g and 56μg/√Hz, respectively. The Z-axis gyroscope has a sensitivity of 0.3mV/°/s and a noise floor of 0.2°/s/√Hz. The characterization of X/Y-axis gyroscope is ongoing.",

author = "Hongzhi Sun and Kemiao Jia and Yingtao Ding and Zhongyang Guo and Xuesong Liu and Guizhen Yan and Huikai Xie",

year = "2010",

doi = "10.1109/ICSENS.2010.5690638",

language = "English",

isbn = "9781424481682",

series = "Proceedings of IEEE Sensors",

pages = "1198--1202",

booktitle = "IEEE Sensors 2010 Conference, SENSORS 2010",

note = "9th IEEE Sensors Conference 2010, SENSORS 2010 ; Conference date: 01-11-2010 Through 04-11-2010",

}

Sun, H, Jia, K, Ding, Y, Guo, Z, Liu, X, Yan, G & Xie, H 2010, A monolithic inertial measurement unit fabricated with improved DRIE post-CMOS process. in IEEE Sensors 2010 Conference, SENSORS 2010., 5690638, Proceedings of IEEE Sensors, pp. 1198-1202, 9th IEEE Sensors Conference 2010, SENSORS 2010, Waikoloa, HI, United States, 1/11/10. https://doi.org/10.1109/ICSENS.2010.5690638

TY - GEN

T1 - A monolithic inertial measurement unit fabricated with improved DRIE post-CMOS process

AU - Sun, Hongzhi

AU - Jia, Kemiao

AU - Ding, Yingtao

AU - Guo, Zhongyang

AU - Liu, Xuesong

AU - Yan, Guizhen

AU - Xie, Huikai

PY - 2010

Y1 - 2010

N2 - This paper reports a monolithic CMOS-MEMS inertial measurement unit (IMU), which is composed of a 3-axis accelerometer, a Z-axis and a lateral-axis gyroscope. The IMU is integrated with interface circuits on a 5×5mm 2 foundry CMOS chip and fabricated with an improved DRIE post-CMOS bulk micromachining process. The new process incorporates a metal deposition to provide a thermal path for isolated structures during DRIE etching. The X/Y-axis accelerometer achieves a sensitivity of 191mV/g with a noise floor of 35μg/√Hz, and those parameters of the Z-axis are 124mV/g and 56μg/√Hz, respectively. The Z-axis gyroscope has a sensitivity of 0.3mV/°/s and a noise floor of 0.2°/s/√Hz. The characterization of X/Y-axis gyroscope is ongoing.

AB - This paper reports a monolithic CMOS-MEMS inertial measurement unit (IMU), which is composed of a 3-axis accelerometer, a Z-axis and a lateral-axis gyroscope. The IMU is integrated with interface circuits on a 5×5mm 2 foundry CMOS chip and fabricated with an improved DRIE post-CMOS bulk micromachining process. The new process incorporates a metal deposition to provide a thermal path for isolated structures during DRIE etching. The X/Y-axis accelerometer achieves a sensitivity of 191mV/g with a noise floor of 35μg/√Hz, and those parameters of the Z-axis are 124mV/g and 56μg/√Hz, respectively. The Z-axis gyroscope has a sensitivity of 0.3mV/°/s and a noise floor of 0.2°/s/√Hz. The characterization of X/Y-axis gyroscope is ongoing.

UR - https://www.scopus.com/pages/publications/79951878915

U2 - 10.1109/ICSENS.2010.5690638

DO - 10.1109/ICSENS.2010.5690638

M3 - Conference contribution

AN - SCOPUS:79951878915

SN - 9781424481682

T3 - Proceedings of IEEE Sensors

SP - 1198

EP - 1202

BT - IEEE Sensors 2010 Conference, SENSORS 2010

T2 - 9th IEEE Sensors Conference 2010, SENSORS 2010

Y2 - 1 November 2010 through 4 November 2010

ER -

A monolithic inertial measurement unit fabricated with improved DRIE post-CMOS process

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